Magneto-resistive effect element, magnetic sensor using magneto-resistive effect, magnetic head using magneto-resistive effect and magnetic memory

• US 7,035,058 B2
• Filed: 05/29/2002
• Issued: 04/25/2006
• Est. Priority Date: 05/30/2001
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Hosomi, Masanori
• Primary Examiner(s): Heinz, A. J.
• Assistant Examiner(s): BLOUIN, MARK S
• Application Number:
  US10/157,306
• Publication Number:
  US 20030011944A1
• Time in Patent Office: 1,427 Days
• Field of Search: 360/324.1, 360/324.12
• US Class Current: 360/324.1
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3916 Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
• CPC Class Codes: G11C 11/15 using multiple magnetic layers G11C11/155 takes precedence
• CPC Class Codes: H10B 61/10 comprising components having two electrodes, e.g. diodes or MIM elements
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A giant magneto-resistive effect element includes a lamination layer structure portion (10) in which at least a free layer (4) the magnetization of which is rotated in response to an external magnetic field, a fixed layer (2), an antiferromagnetic layer (1) for fixing the magnetization of the fixed layer (2) and a nonmagnetic layer (3) interposed between the free layer (4) and the fixed layer (2) are laminated with each other. A sense current flows to substantially a lamination layer direction of the lamination layer structure portion (10) and the lamination layer structure portion (10) has disposed thereon a high-resistance layer (R) which crosses a path of the sense current, whereby an element resistance can be increased and a magneto-resistance change amount can be increased. Thus, a magneto-resistive effect element, a magneto-resistive effect type magnetic sensor, a magneto-resistive effect type magnetic head and a magnetic memory become able to increase a magneto-resistive change amount.

Claims

1. A magneto-resistive effect element, said magneto-resistive effect element being a giant magneto-resistive element including a lamination layer structure portion in which at least a free layer the magnetization of which is rotated in response to an external magnetic field, a fixed layer, an antiferromagnetic layer for fixing the magnetization of said fixed layer and a nonmagnetic layer interposed between said free layer and said fixed layer are laminated and in which

a sense current flows to substantially a lamination layer direction of said lamination layer structure portion, wherein

said lamination layer structure portion has disposed thereon a high-resistance layer which crosses a path of said sense current,

wherein said high-resistance layer is disposed at not less than any one of the inside of said free layer, the surface of said free layer as is opposite to a surface at which it is bonded to said nonmagnetic layer, the inside of said ferromagnetic layer comprising said fixed layer, the inside of said antiferromagnetic layer, and the surface of said antiferromagnetic layer as is opposite to a surface at which it is bonded to said fixed layer.

2. A magneto-resistive effect element according to claim 1, wherein said high-resistance layer is disposed at other positions than at an interface between the layers comprising said lamination layer structure portion.

3. A magnetic sensor using magneto-resistive effect element including a magneto-resistive effect element, said magneto-resistive effect element being a giant magneto-resistive effect element including a lamination layer structure portion in which

at least a free layer the magnetization of which is rotated in response to an external magnetic field, a fixed layer, an antiferromagnetic layer for fixing the magnetization of said fixed layer and a nonmagnetic layer interposed between said free layer and said fixed layer are laminated and in which

a sense current flows to substantially a lamination layer direction of said lamination layer structure portion, wherein

said lamination layer structure portion has disposed thereon a high-resistance layer which crosses a path of said sense current,

wherein said high-resistance layer is disposed at not less than any one of the inside of said free layer, the surface of said free layer as is opposite to a surface at which it is bonded to said nonmagnetic layer, the inside of said ferromagnetic layer comprising said fixed layer, the inside of said antiferromagnetic layer, and the surface of said antiferromagnetic layer as is opposite to a surface at which it is bonded to said fixed layer.

4. A magnetic sensor using magneto-resistive effect according to claim 3, wherein said high-resistance layer is disposed at other positions than at an interface between the layers comprising said lamination layer structure portion.

5. A magnetic head using magneto-resistive effect in which a magneto-resistive effect element is disposed between first and second magnetic shields, said magneto-resistive effect element being a giant magneto-resistive effect element including a lamination layer structure portion in which

at least a free layer the magnetization of which is rotated in response to an external magnetic field, a fixed layer, an antiferromagnetic layer for fixing the magnetization of said fixed layer and a nonmagnetic layer interposed between said free layer and said fixed layer are laminated with each other and in which

a sense current flows to substantially a lamination layer direction of said lamination layer structure portion, a magneto-resistive effect type magnetic head characterized in that said lamination layer structure portion has disposed thereon a high-resistance layer which crosses a path of said sense current,

wherein said high-resistance layer is disposed at not less than any one of the inside of said free layer, the surface of said free layer as is opposite to a surface at which it is bonded to said nonmagnetic layer, the inside of said ferromagnetic layer comprising said fixed layer, the inside of said antiferromagnetic layer, and the surface of said antiferromagnetic layer as is opposite to a surface at which it is bonded to said fixed layer.

6. A magneto-resistive effect type magnetic head according to claim 5, wherein said high-resistance layer is disposed at other positions than at an interface between the layers comprising said lamination layer structure portion.