Methods of fabricating light emitting devices using mesa regions and passivation layers
First Claim
1. A method of fabricating a plurality of light emitting devices comprising:
- epitaxially forming a plurality of spaced apart mesa regions on a substrate, the mesa regions including therein a diode region;
defining first reduced area regions on the mesa regions;
forming a multilayer conductive stack that includes a barrier layer on the first reduced area regions of the mesa regions;
forming a passivation layer on the substrate between the mesa regions, on exposed portions of the mesa regions and on exposed portions of the multilayer conductive stacks, the passivation layer defining second reduced area regions on the multilayer conductive stacks;
forming a bonding layer on the second reduced area regions of the multilayer conductive stacks; and
dicing the substrate between the mesas to produce the plurality of light emitting diodes.
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Accused Products
Abstract
Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive stack opposite the epitaxial region, to define a bonding region on the multilayer conductive stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive stack, across the epitaxial region and onto the substrate. The multilayer conductive stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer. A submount and a bond between the bonding layer and the submount also may be provided.
117 Citations
20 Claims
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1. A method of fabricating a plurality of light emitting devices comprising:
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epitaxially forming a plurality of spaced apart mesa regions on a substrate, the mesa regions including therein a diode region; defining first reduced area regions on the mesa regions; forming a multilayer conductive stack that includes a barrier layer on the first reduced area regions of the mesa regions; forming a passivation layer on the substrate between the mesa regions, on exposed portions of the mesa regions and on exposed portions of the multilayer conductive stacks, the passivation layer defining second reduced area regions on the multilayer conductive stacks; forming a bonding layer on the second reduced area regions of the multilayer conductive stacks; and dicing the substrate between the mesas to produce the plurality of light emitting diodes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification
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- Resources
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Current AssigneeCREE Led Incorporated (Smart Global Holdings Incorporated)
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Original AssigneeCREE Incorporated (Wolfspeed, Inc.)
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InventorsAndrews, Peter S., Williams, Bradley E., Slater, David B. Jr.
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Primary Examiner(s)Zarabian, Amir
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Assistant Examiner(s)Perkins, Pamela E
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Application NumberUS10/825,647Publication NumberTime in Patent Office747 DaysField of Search438/29, 438/39, 438/41US Class Current438/39CPC Class CodesH01L 24/32 of an individual layer conn...H01L 2924/00 Indexing scheme for arrange...H01L 2924/01322 Eutectic Alloys, i.e. obtai...H01L 2924/12032 Schottky diodeH01L 2924/12041 LEDH01L 2924/181 EncapsulationH01L 33/20 with a particular shape, e....H01L 33/405 Reflective materialsH01L 33/62 Arrangements for conducting...
