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CMOS imager with a self-aligned buried contact

  • US 7,037,771 B2
  • Filed: 08/13/2004
  • Issued: 05/02/2006
  • Est. Priority Date: 06/18/1999
  • Status: Expired due to Term
First Claim
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1. A method of forming a buried contact, comprising the steps of:

  • providing a substrate including at least one transistor and at least one isolation region;

    forming a protective layer over said substrate;

    selectively removing at least a portion of said protective layer between a gate of said at least one transistor and another substrate feature selected from the group consisting of another transistor gate and said isolation region, to form a plug opening within said protective layer; and

    forming a continuously conductive layer in said plug opening to form a buried contact.

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