Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
First Claim
1. A method for implanting ions in a layer of a workpiece, comprising:
- placing said workpiece on a workpiece support in a chamber with said layer being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling;
introducing into said chamber a process gas comprising the species to be implanted in said layer of said workpiece;
generating from said process gas a plasma by capacitively coupling RF source power across said workpiece support and said ceiling or said sidewall from an RF source power generator;
applying an RF bias from an RF bias generator to said workpiece support; and
wherein said RF bias generator has a bias frequency that is sufficiently low for ions in a plasma sheath near said workpiece to follow electric field oscillations across said sheath at said bias frequency.
1 Assignment
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Accused Products
Abstract
A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas including the species to be implanted in the surface layer of the workpiece. The method includes generating from the process gas a plasma by capacitively coupling RF source power across the workpiece support and the ceiling or the sidewall from an RF source power generator. The method further includes applying an RF bias from an RF bias generator to the workpiece support.
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Citations
86 Claims
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1. A method for implanting ions in a layer of a workpiece, comprising:
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placing said workpiece on a workpiece support in a chamber with said layer being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling; introducing into said chamber a process gas comprising the species to be implanted in said layer of said workpiece; generating from said process gas a plasma by capacitively coupling RF source power across said workpiece support and said ceiling or said sidewall from an RF source power generator; applying an RF bias from an RF bias generator to said workpiece support; and wherein said RF bias generator has a bias frequency that is sufficiently low for ions in a plasma sheath near said workpiece to follow electric field oscillations across said sheath at said bias frequency. - View Dependent Claims (5, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 31, 35, 44, 45, 46, 47, 52, 53, 54, 55, 56, 57, 69, 70, 71, 78, 79, 85, 86)
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2. A method for implanting ions in a layer of a workpiece, comprising:
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placing said workpiece on a workpiece support in a chamber with said layer being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling; introducing into said chamber a process gas comprising the species to be implanted in said layer of said workpiece; generating from said process gas a plasma by capacitively coupling RF source power across said workpiece support and said ceiling or said sidewall from an RF source power generator; applying an RF bias from an RF bias generator to said workpiece support; and wherein said RF bias generator has a bias frequency that is sufficiently low for ions in a plasma sheath near said workpiece to attain an ion energy at least nearly equivalent to a peak-to-peak voltage of said RF bias generator. - View Dependent Claims (3, 4)
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6. A method for implanting ions in a layer of a workpiece, comprising:
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placing said workpiece on a workpiece support in a chamber with said layer being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling; introducing into said chamber a process gas comprising the species to be implanted in said layer of said workpiece; generating from said process gas a plasma by capacitively coupling RF source power across said workpiece support and said ceiling or said sidewall from an RF source power generator; applying an RF bias from an RF bias generator to said workpiece support; setting said RF bias to a level corresponding to a desired depth in said layer to which said element is to be implanted; and wherein said layer comprises a semiconductor material, and said species to be implanted comprises a dopant impurity that promotes one of a p-type or n-type conductivity in said semiconductor material, and wherein said desired depth to which said element is to be implanted corresponds to a desired p-n junction depth. - View Dependent Claims (7, 8, 9, 10, 30, 32, 33, 34, 37, 38, 39, 40, 41, 42, 43)
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36. A method for implanting ions in a layer of a workpiece, comprising:
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placing said workpiece on a workpiece support in a chamber with said layer being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling; introducing into said chamber a process gas comprising the species to be implanted in said layer of said workpiece; generating from said process gas a plasma by capacitively coupling RF source power across said workpiece support and said ceiling or said sidewall from an RF source power generator; applying an RF bias from an RF bias generator to said workpiece support; wherein said layer comprises plural dielectric gates formed over an underlying layer having horizontal and non-horizontal surfaces; and the step of applying bias power comprises selecting a level of said bias power promotive of a sufficiently collisional plasma sheath over said workpiece to produce a significant fraction of ions impacting said layer at trajectories other than orthogonal to said layer whereby to implant ions in said horizontal and non-horizontal surfaces of said layer.
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48. A method for implanting ions in a layer of a workpiece, comprising:
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placing said workpiece on a workpiece support in a chamber with said layer being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling; introducing into said chamber a process gas comprising the species to be implanted in said layer of said workpiece; generating from said process gas a plasma by capacitively coupling RF source power across said workpiece support and said ceiling or said sidewall from an RF source power generator; applying an RF bias from an RF bias generator to said workpiece support; and wherein the step of applying said bias power comprises applying a single burst of said bias power to said workpiece support. - View Dependent Claims (49, 50, 51)
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58. A method for implanting ions in a layer of a workpiece, comprising:
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placing said workpiece on a workpiece support in a chamber with said layer being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling; introducing into said chamber a process gas comprising the species to be implanted in said layer of said workpiece; generating from said process gas a plasma by capacitively coupling RF source power across said workpiece support and said ceiling or said sidewall from an RF source power generator; applying an RF bias from an RF bias generator to said workpiece support; and wherein said species to be implanted comprises a first atomic element, said process gas further comprising; a second atomic element in chemical combination with said first atomic element. - View Dependent Claims (59, 60, 61, 62, 63, 64, 65, 66, 67, 68)
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72. A method for implanting ions in a layer of a workpiece, comprising:
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placing said workpiece on a workpiece support in a chamber with said layer being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling; introducing into said chamber a process gas comprising the species to be implanted in said layer of said workpiece; generating from said process gas a plasma by capacitively coupling RF source power across said workpiece support and said ceiling or said sidewall from an RF source power generator; applying an RF bias from an RF bias generator to said workpiece support; providing an optical metrology chamber; obtaining a measurement of ion implantation in a workpiece previously processed in said plasma immersion ion implantation reactor; and adjusting said magnitude of said bias in accordance with said measurement.
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73. A method for implanting ions in a layer of a workpiece, comprising:
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placing said workpiece on a workpiece support in a chamber with said layer being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling; introducing into said chamber a process gas comprising the species to be implanted in said layer of said workpiece; generating from said process gas a plasma by capacitively coupling RF source power across said workpiece support and said ceiling or said sidewall from an RF source power generator; applying an RF bias from an RF bias generator to said workpiece support; providing an ion beam implantation apparatus; and placing said workpiece in said ion beam implantation apparatus and implanting a second species in said layer. - View Dependent Claims (74, 75, 76, 77)
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80. A method for implanting ions in a layer of a workpiece, comprising:
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placing said workpiece on a workpiece support in a chamber with said layer being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling; introducing into said chamber a process gas comprising the species to be implanted in said layer of said workpiece; generating from said process gas a plasma by capacitively coupling RF source power across said workpiece support and said ceiling or said sidewall from an RF source power generator; applying an RF bias from an RF bias generator to said workpiece support; providing a photoresist strip chamber; and the step generating a plasma is followed by placing said workpiece in said photoresist strip chamber and removing photoresist from said workpiece.
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81. A method for implanting ions in a layer of a workpiece, comprising:
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placing said workpiece on a workpiece support in a chamber with said layer being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling; introducing into said chamber a process gas comprising the species to be implanted in said layer of said workpiece; generating from said process gas a plasma by capacitively coupling RF source power across said workpiece support and said ceiling or said sidewall from an RF source power generator; applying an RF bias from an RF bias generator to said workpiece support; providing a wet clean chamber; and and wherein the step of generating said plasma is followed by placing said workpiece in said wet clean chamber.
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82. A method for implanting ions in a layer of a workpiece, comprising:
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placing said workpiece on a workpiece support in a chamber with said layer being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling; introducing into said chamber a process gas comprising the species to be implanted in said layer of said workpiece; generating from said process gas a plasma by capacitively coupling RF source power across said workpiece support and said ceiling or said sidewall from an RF source power generator; applying an RF bias from an RF bias generator to said workpiece support; providing a second plasma immersion ion implantation reactor; and placing said workpiece in said second plasma immersion ion implantation reactor and implanting a second species in said layer. - View Dependent Claims (83, 84)
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Specification