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Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage

  • US 7,037,813 B2
  • Filed: 08/22/2003
  • Issued: 05/02/2006
  • Est. Priority Date: 08/11/2000
  • Status: Expired due to Fees
First Claim
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1. A method for implanting ions in a layer of a workpiece, comprising:

  • placing said workpiece on a workpiece support in a chamber with said layer being in facing relationship with a ceiling of said chamber, thereby defining a processing zone between said workpiece and said ceiling;

    introducing into said chamber a process gas comprising the species to be implanted in said layer of said workpiece;

    generating from said process gas a plasma by capacitively coupling RF source power across said workpiece support and said ceiling or said sidewall from an RF source power generator;

    applying an RF bias from an RF bias generator to said workpiece support; and

    wherein said RF bias generator has a bias frequency that is sufficiently low for ions in a plasma sheath near said workpiece to follow electric field oscillations across said sheath at said bias frequency.

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