Post thermal treatment methods of forming high dielectric layers over interfacial layers in integrated circuit devices
First Claim
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1. A method for treating a high dielectric layer of a semiconductor device, comprising:
- nitriding a high dielectric layer on a silicon substrate, wherein said high dielectric layer comprises a nano laminate comprising a Group 3 metal oxide layer and a layer selected from the group consisting of a hafnium oxide layer and a zirconium oxide layer and wherein an ozone oxide layer is positioned between said high dielectric layer and said silicon substrate; and
post treating the high dielectric layer, ozone oxide layer, and silicon substrate.
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Abstract
High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates or ozone oxide layers over silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.
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Citations
14 Claims
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1. A method for treating a high dielectric layer of a semiconductor device, comprising:
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nitriding a high dielectric layer on a silicon substrate, wherein said high dielectric layer comprises a nano laminate comprising a Group 3 metal oxide layer and a layer selected from the group consisting of a hafnium oxide layer and a zirconium oxide layer and wherein an ozone oxide layer is positioned between said high dielectric layer and said silicon substrate; and post treating the high dielectric layer, ozone oxide layer, and silicon substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for treating a high dielectric layer of a semiconductor device, comprising:
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nitriding a high dielectric layer on a silicon substrate, wherein the high dielectric layer comprises a multi-layered nano laminate formed by forming a hafnium oxide layer or a zirconium oxide layer on the substrate using atomic layer deposition and then forming a Group 3 metal oxide layer thereon using atomic layer deposition, wherein an ozone oxide layer is positioned between the high dielectric layer and the silicon substrate; and post treating the high dielectric layer and silicon substrate.
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Specification