Integrated circuit device
First Claim
Patent Images
1. A solid state semiconductor device comprising:
- a first solid semiconductor material of one conductivity type, a second solid semiconductor material of an opposite conductivity type, said first and second solid semiconductor materials having respective adjoining regions, and a PN junction between said respective adjoining regions; and
an electrically insulating solid material which adjoins said first solid semiconductor material, said second solid semiconductor material, and a lateral edge of said PN junction;
said electrically insulating solid material having a top curved interface with a radius of curvature selected from the group consisting of 0.001 cm, 0.01 cm, 0.1 cm, and 1.0 cm;
said first solid semiconductor material having a first portion which is above said PN junction and has a thickness which gradually changes with closeness in a lateral direction to said lateral edge of said PN junction;
said second solid semiconductor material having a first portion which is underneath said PN junction and has a thickness which gradually changes with closeness in a lateral direction to said lateral edge of said PN junction direction; and
said electrically insulating material having a first portion which is laterally spaced from said PN junction and has a thickness which gradually decreases with closeness in a lateral direction to said lateral edge of said PN junction.
1 Assignment
0 Petitions
Accused Products
Abstract
An integrated circuit device comprising:
- a body of a first solid material having an upper surface and a major bottom surface;
- a pocket of a second solid material having a top surface and a side surface, and a bottom surface which contacts a selected portion of said upper surface on said body;
- said first and second solid materials being so selected as to form, where said pocket contacts said body at said selected portion of said upper surface, an electronic interfacial barrier which is substantially conductive under an applied bias of at least one selected polarity; and
- a solid electrically insulating region which meets said barrier and adjoins both said body and at least a line on said side surface of said pocket;
- wherein at least a part of said solid electrically insulating region comprises nitrogen located at least below the level of said electronic interfacial barrier.
-
Citations
20 Claims
-
1. A solid state semiconductor device comprising:
-
a first solid semiconductor material of one conductivity type, a second solid semiconductor material of an opposite conductivity type, said first and second solid semiconductor materials having respective adjoining regions, and a PN junction between said respective adjoining regions; and an electrically insulating solid material which adjoins said first solid semiconductor material, said second solid semiconductor material, and a lateral edge of said PN junction; said electrically insulating solid material having a top curved interface with a radius of curvature selected from the group consisting of 0.001 cm, 0.01 cm, 0.1 cm, and 1.0 cm; said first solid semiconductor material having a first portion which is above said PN junction and has a thickness which gradually changes with closeness in a lateral direction to said lateral edge of said PN junction; said second solid semiconductor material having a first portion which is underneath said PN junction and has a thickness which gradually changes with closeness in a lateral direction to said lateral edge of said PN junction direction; and said electrically insulating material having a first portion which is laterally spaced from said PN junction and has a thickness which gradually decreases with closeness in a lateral direction to said lateral edge of said PN junction. - View Dependent Claims (2, 3)
-
-
4. A solid state semiconductor device comprising:
-
a first solid semiconductor material of one conductivity type, a second solid semiconductor material of an opposite conductivity type, said first and second solid semiconductor materials being at respective adjacent regions thereof, and an electronic signal-translating, rectifying barrier between said respective adjacent regions, said rectifying barrier having a lateral edge; an electrically insulating solid material which adjoins said first solid semiconductor material, said second solid semiconductor material, and said lateral edge of said PN junction; and at least one of said first solid semiconductor material, said second solid semiconductor material, and said electrically insulating solid material having a designated first portion which has a thickness changing gradually along a selected lateral direction; said second solid semiconductor material having a first portion which has a thickness changing gradually along a second lateral direction; said electrically insulating solid material having a first portion which has a thickness changing gradually along a third lateral direction. - View Dependent Claims (5, 6, 7, 8, 9, 10)
-
-
11. An active semiconductor device of less than one micron in size and having a vertical depth accuracy of better than 1,300 Angstroms, comprising:
-
a semiconductor substrate having one conductivity type; a semiconductor pocket positioned adjacently on said substrate and having an opposite conductivity type; an electronic signal-translating, rectifying barrier adjoining and forming as its top with, said pocket and adjoining and forming at its bottom with, said substrate;
said rectifying barrier having a lateral edge; andan electrically isolating solid material which adjoins and metallurgically perfectly bonds with all said substrate, said pocket, and said lateral edge of said rectifying barrier;
with respective, nearly 100% dense bonding regions which are microscopically free of visible microcracks at 1,000 times magnification;said barrier region having a selected surface which is microscopically precise, with a better than one micron in accuracy in shape, size, and position of the rectifying barrier; on a vertical cross-section, said barrier region having a curved portion in a major central portion thereof. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification