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Integrated circuit device

  • US 7,038,290 B1
  • Filed: 06/07/1995
  • Issued: 05/02/2006
  • Est. Priority Date: 09/28/1965
  • Status: Expired due to Fees
First Claim
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1. A solid state semiconductor device comprising:

  • a first solid semiconductor material of one conductivity type, a second solid semiconductor material of an opposite conductivity type, said first and second solid semiconductor materials having respective adjoining regions, and a PN junction between said respective adjoining regions; and

    an electrically insulating solid material which adjoins said first solid semiconductor material, said second solid semiconductor material, and a lateral edge of said PN junction;

    said electrically insulating solid material having a top curved interface with a radius of curvature selected from the group consisting of 0.001 cm, 0.01 cm, 0.1 cm, and 1.0 cm;

    said first solid semiconductor material having a first portion which is above said PN junction and has a thickness which gradually changes with closeness in a lateral direction to said lateral edge of said PN junction;

    said second solid semiconductor material having a first portion which is underneath said PN junction and has a thickness which gradually changes with closeness in a lateral direction to said lateral edge of said PN junction direction; and

    said electrically insulating material having a first portion which is laterally spaced from said PN junction and has a thickness which gradually decreases with closeness in a lateral direction to said lateral edge of said PN junction.

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