Semiconductor laser device

• US 7,039,085 B2
• Filed: 04/21/2004
• Issued: 05/02/2006
• Est. Priority Date: 04/23/2003
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Nakagawa, Yasuyuki, Nishiguchi, Harumi, Kunitsugu, Yasuhiro, Matsuoka, Hiromasu
• Primary Examiner(s): Ho, Tan
• Assistant Examiner(s): AL NAZER, LEITH A
• Application Number:
  US10/828,267
• Publication Number:
  US 20040213314A1
• Time in Patent Office: 741 Days
• Field of Search: 372/43.01, 372/98, 372/99, 372/49.01
• US Class Current: 372/49.01
• CPC Class Codes: H01S 5/028 Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
• CPC Class Codes: H01S 5/0287 Facet reflectivity

Abstract

A semiconductor laser device includes a dielectric multilayer film with a reflectance of 40% or more, on at least one of optical exit faces of a laser chip. The dielectric multilayer film includes a film of tantalum oxide (Ta₂O₅) and another film of a dielectric oxide, such as aluminum oxide (Al₂O₃), and silicon oxide (SiO₂). The tantalum oxide film has an optical absorption coefficient smaller than that of silicon (Si) and thermal stability in emission superior to that of titanium oxide (TiO₂), thereby remarkably improving the catastrophic optical damage degradation level of the laser chip.

Claims

1. A semiconductor laser device comprising:

a semiconductor body including a semiconductor substrate supporting a plurality of semiconductor layers, the semiconductor layers including an active layer in which light having a characteristic wavelength is generated, a pair of cladding layers disposed on opposite sides of the active layer, and opposed front and rear end faces transverse to the substrate and semiconductor layers, the light generated within the semiconductor laser exiting through the front end face and being reflected from the rear end face;

a film on the front end face and having a first, relatively low reflectivity at the characteristic wavelength; and

a dielectric multilayer film on the rear end face and having a second reflectivity, higher than the first reflectivity, and at least 40% at the characteristic wavelength, wherein the dielectric multilayer film includes a film of aluminum oxide in contact with the rear end face, a film of silicon oxides, and a film of tantalum oxide.

2. The semiconductor laser device according to claim 1, wherein the dielectric multilayer film has, in sequence, from the layer in contact with the rear end face, a first film of aluminum oxide, at least three paired layers, and a final film of silicon oxide, and each paired layer includes a silicon oxide film and a tantalum oxide film.

3. The semiconductor laser device according to claim 2, wherein the dielectric multilayer film has N layers, the first layer, from the layer in contact with the rear end face, has a thickness equivalent to λ

/2 in terms of optical length at the characteristic wavelength, and each of the second to (N−

1)th layers has a thickness equivalent to λ

/4 in terms of optical length at the characteristic wavelength, and the Nth layer has a thickness equivalent to λ

/2 in terms of optical length at the characteristic wavelength.

4. A semiconductor laser device comprising:

a semiconductor body including a semiconductor substrate supporting a plurality of semiconductor layers, the semiconductor layers including an active layer in which light having a characteristic wavelength is generated, a pair of cladding layers disposed on opposite sides of the active layer, and opposed front and rear end faces transverse to the substrate and semiconductor layers, the light generated within the semiconductor laser exiting through the front end face and being reflected from the rear end face;

a film on the front end face and having a first, relatively low reflectivity at the characteristic wavelength; and

a dielectric multilayer film on the rear end face and having a second reflectivity, higher than the first reflectivity and at least 40% at the characteristic wavelength, wherein the dielectric multilayer film has, in sequences, from the layer in contact with the rear end face, at least three paired layers, and a final film of aluminum oxide, and each of the paired layers includes an aluminum oxide film and a tantalum oxide film.

5. The semiconductor laser device according to claim 4, wherein the dielectric multilayer film has N layers, each of the first to (N−

1)th layers, from the layer in contact with the rear end face, has a thickness equivalent to λ

/4 in terms of optical length at the characteristic wavelength, and the Nth layer has a thickness equivalent to λ

/2 in terms of optical length at the characteristic wavelength.