Distributed amplifier optical modulators

• US 7,039,258 B2
• Filed: 08/13/2004
• Issued: 05/02/2006
• Est. Priority Date: 08/15/2003
• Status: Active Grant

• Current Assignee: Cisco Technology, Inc. (Cisco Systems, Inc.)
• Original Assignee: Luxtera Incorporated (Cisco Systems, Inc.)
• Inventors: Koumans, Roger, Li, Bing, Gunn, Lawrence C. III, Pinguet, Thierry J., Li, Guo Liang
• Primary Examiner(s): Pak, Sung
• Assistant Examiner(s): STAHL, MICHAEL J
• Application Number:
  US10/917,927
• Publication Number:
  US 20050036791A1
• Time in Patent Office: 627 Days
• Field of Search: 385 1- 3, 385/14, 385/27, 385/39, 385/40
• US Class Current: 385/1
• CPC Class Codes: G02B 2006/12142 Modulator
• CPC Class Codes: G02B 2006/12159 Interferometer
• CPC Class Codes: G02F 1/0121 Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
• CPC Class Codes: G02F 1/025 in an optical waveguide structure G02F1/017, G02F1/2257 take precedence
• CPC Class Codes: G02F 1/2255 controlled by a high-frequency electromagnetic component in an electric waveguide structure
• CPC Class Codes: G02F 1/2257 the optical waveguides being made of semiconducting material
• CPC Class Codes: G02F 2201/127 travelling wave
• CPC Class Codes: G02F 2201/16 series; tandem
• CPC Class Codes: G02F 2201/20 delay line
• CPC Class Codes: H01S 5/0265 Intensity modulators intra-cavity modulators H01S5/0625
• CPC Class Codes: H01S 5/5027 Concatenated amplifiers, i.e. amplifiers in series or cascaded
• CPC Class Codes: H04B 10/5051 using a series, i.e. cascade, combination of modulators
• CPC Class Codes: H04B 10/5053 using a parallel, i.e. shunt, combination of modulators

Abstract

High speed optical modulators can be made of k modulators connected in series disposed on one of a variety of semiconductor substrates. An electrical signal propagating in a microwave transmission line is tapped off of the transmission line at regular intervals and is amplified by k distributed amplifiers. Each of the outputs of the k distributed amplifiers is connected to a respective one of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable lumped element modulator, due to the lower capacitance of each of the k modulators. Distributed amplifier modulators can have much higher modulating speeds than a comparable traveling wave modulator, due to the impedance matching provided by the distributed amplifiers.

Claims

1. An integrated optoelectronic device on a monolithic substrate comprising:

a plurality of optical modulating elements coupled in series,

where the plurality of optical modulating elements has an optical input port and an optical output port,

each of the plurality of optical modulating elements has an electrical input port for modulating the propagation properties of a guided optical wave propagating in a respective one of the plurality of optical modulating elements, and

at least one of the plurality of optical modulating elements comprises a two terminal silicon PN diode wherein a depletion region can be varied according to a bias voltage for varying a refractive index;

wherein the refractive index variation modulates the propagation properties of the guided optical wave;

and a plurality of amplifiers,

where each of the plurality of amplifiers has an input port, an output port and each output port is coupled to the electrical input port of a respective one of the plurality of optical modulating elements.

2. The optoelectronic device of claim 1, and further comprising a multi-tap delay line comprised of a plurality of electrical delay elements coupled in series,

where the multi-tap delay line has an input port and a plurality of output ports,

each of the plurality of output ports comprises the output of a respective one of the plurality of delay elements, and

each one of the output ports is coupled to a respective one of the input ports of the plurality of amplifiers.

3. The optoelectronic device of claim 2, wherein the plurality of delay lines comprises a microwave transmission line with an input port and a plurality of output ports.

4. The optoelectronic device of claim 3, wherein the output impedance of each of the plurality of output ports of the transmission line is substantially equal to the input impedance of each respective input port of the plurality of amplifiers.

5. The optoelectronic device of claim 1, wherein the output impedance of each of the plurality of output ports of the plurality of amplifiers is substantially equal to the input impedance of each respective input port of the plurality of optical modulators.

9. The optoelectronic device of claim 2, wherein the electrical propagation velocity in the plurality of delay lines is substantially equal to the optical propagation velocity in the plurality of optical modulators.

10. The optoelectronic device of claim 2, wherein a signal propagating in the plurality of delay lines is attenuated as it propagates through the plurality of delay lines,

where the amplitude of a signal at a selected one of the plurality of output ports of the plurality of delay lines is attenuated relative to the amplitude of an input signal coupled to the input port of the plurality of delay lines.

11. The optoelectronic device of claim 1, wherein each of the plurality of amplifiers has an adjustable gain, where the gain of each of the plurality of amplifiers is adjusted to provide a signal of substantially the same amplitude at the output port of each of the plurality of amplifiers.

12. The optoelectronic device of claim 1, wherein each of the plurality of amplifiers has an automatic gain control, where the automatic gain control of each of the plurality of amplifiers is used to provide a signal of substantially the same amplitude at the output port of each of the plurality of amplifiers.

13. The optoelectronic device of claim 1, wherein each of the plurality of optical modulators is selected from a group consisting of:

an electroabsorptive modulator, a phase modulator, a PN modulator.

14. The optoelectronic device of claim 2, and further comprising using the optoelectronic device in an optical processing system.

15. The optoelectronic device of claim 14, wherein the optical processing system is selected from a group comprising:

an arrayed waveguide grating (AWG), an optical switch, a laser cavity, a ring resonator based add/drop filter, a Fabry-Perot (FP) cavity based add/drop filter, an MZI based filter, a ring resonator based filter, FP cavity based filter, a periodically perturbed waveguide, a corrugated waveguide, a multi-mode-interference (MMI) splitter/combiner, Y-junction and directional coupler.

16. The optoelectronic device of claim 2, and further comprising using the optoelectronic device in an integrated optical modulation system selected from a group comprising:

a Mach-Zehnder Interferometer, a ring modulator and a Fabry-Perot cavity.

18. The optoelectronic device of claim 2, wherein the optoelectronic device is disposed on a substrate selected from a group consisting of:

a layer of monocrystalline silicon,

silicon on insulator (SOI),

a layer of sapphire,

an air filled cavity,

wherein the two terminal silicon PN diode comprises a periodical distributed lateral abrupt PN diode structure.

19. The optoelectronic device of claim 18, wherein silicon used to form at least one component of the plurality of modulating elements and the silicon body of a transistor are formed at the same time from the same silicon.

20. The optoelectronic device of claim 1, wherein at least one of the input ports of the plurality of amplifiers is coupled to a device formed on the substrate and where the device is selected from the group comprising:

a CMOS transistor, a BiCMOS transistor, a bipolar junction transistor (BJT), a junction PET (JFET) transistor, a diode, a resistor, a capacitor and an inductor.

21. The optoelectronic device of claim 2, wherein the optoelectronic device is disposed on a substrate selected from a group consisting of:

a layer of monocrystalline silicon,

silicon on insulator (SOI),

a layer of sapphire, and

an air filled cavity,

wherein the two terminal silicon PN diode comprises a first and second doped regions and a first and second electrical contacts formed in the respective first and second doped regions;

wherein the highest concentration of dopant within each of the respective first and second doped regions is substantially adjacent to the first and second electrical contacts;

wherein the lowest concentration of dopant within each of the respective first and second doped regions is substantially in the center of the guided optical wave propagating in a respective one of the plurality of optical modulating elements.

6. An optoelectronic device on a substrate comprising:

a plurality of optical modulating elements coupled in series,

where the plurality of optical modulating elements has an optical input port and an optical output port; and

each of the plurality of optical modulating elements has an electrical input port for modulating the propagation properties of a guided optical wave propagating in a respective one of the plurality of optical modulating elements;

a plurality of amplifiers,

where each of the plurality of amplifiers has an input port, an output port and each output port is coupled to the electrical input port of a respective one of the plurality of optical modulating elements; and

a multi-tap delay line comprised of a plurality of electrical delay elements coupled in series;

where the multi-tap delay line has an input port and a plurality of output ports;

each of the plurality of output ports comprises the output of a respective one of the plurality of delay elements; and

each one of the output ports is coupled to a respective one of the input ports of the plurality of amplifiers;

wherein the plurality of delay lines are transistor based.

7. The optoelectronic device of claim 6, wherein at least one of the plurality of delay lines comprises an electronically controlled variable delay line.

8. An optoelectronic device on a substrate comprising:

a plurality of optical modulating elements coupled in series,

where the plurality of optical modulating elements has an optical input port and an optical output port; and

each of the plurality of optical modulating elements has an electrical input port for modulating the propagation properties of a guided optical wave propagating in a respective one of the plurality of optical modulating elements;

a plurality of amplifiers,

where each of the plurality of amplifiers has an input port, an output port and each output port is coupled to the electrical input port of a respective one of the plurality of optical modulating elements;

a multi-tap delay line comprised of a plurality of electrical delay elements coupled in series;

where the multi-tap delay line has an input port and a plurality of output ports;

where each of the plurality of output ports comprises the output of a respective one of the plurality of delay elements;

where each one of the output ports is coupled to a respective one of the input ports of the plurality of amplifiers; and

a plurality of buffer circuits;

wherein the output of at least one of the plurality of delay lines is coupled to the input of a respective buffer circuit and the output of the buffer circuit is coupled to at least one other of the plurality of delay lines, and the output of the buffer circuit is coupled to a respective one of the input ports of the plurality of amplifiers.

17. An optoelectronic device on a substrate comprising:

a plurality of optical modulating elements coupled in series,

where the plurality of optical modulating elements has an optical input port and an optical output port; and

each of the plurality of optical modulating elements has an electrical input port for modulating the propagation properties of a guided optical wave propagating in a respective one of the plurality of optical modulating elements;

a plurality of amplifiers,

where each of the plurality of amplifiers has an input port, an output port and each output port is coupled to the electrical input port of a respective one of the plurality of optical modulating elements;

a multi-tap delay line comprised of a plurality of electrical delay elements coupled in series;

where the multi-tap delay line has an input port and a plurality of output ports;

where each of the plurality of output ports comprises the output of a respective one of the plurality of delay elements;

where each one of the output ports is coupled to a respective one of the input ports of the plurality of amplifiers; and

an optical splitter and an optical combiner,

where the odd numbered modulating elements of the plurality of modulating elements are coupled in a first series with an optical input port and an optical output port,

the even numbered modulating elements of the plurality of modulating elements are coupled in a second series with an optical input port and an optical output port,

the optical splitter has an input port and first and second output ports,

the optical combiner has first and second input ports and an output port,

the first output port of the optical splitter is coupled to the optical input port of the first series,

the second output port of the optical splitter is coupled to the optical input port of the second series,

the optical output port of the first series is coupled to the first input port of the optical combiner, and

the optical output port of the second series is coupled to the second input port of the optical combiner.

22. An integrated optoelectronic device on a monolithic substrate comprising:

a plurality of optical modulating elements coupled in series,

where the plurality of optical modulating elements has an optical input port and an optical output port; and

each of the plurality of optical modulating elements has an electrical input port for modulating the propagation properties of a guided optical wave propagating in a respective one of the plurality of optical modulating elements;

a plurality of amplifiers,

where each of the plurality of amplifiers has an input port, an output port and each output port is coupled to the electrical input port of a respective one of the plurality of optical modulating elements;

wherein at least one of the plurality of the optical modulating elements comprises a MOS capacitor.

23. An integrated optoelectronic device on a monolithic substrate comprising:

a plurality of optical modulating elements coupled in series,

where the plurality of optical modulating elements has an optical input port and an optical output port; and

each of the plurality of optical modulating elements has an electrical input port for modulating the propagation properties of a guided optical wave propagating in a respective one of the plurality of optical modulating elements;

a plurality of amplifiers,

where each of the plurality of amplifiers has an input port, an output port and each output port is coupled to the electrical input port of a respective one of the plurality of optical modulating elements;

wherein at least one of the plurality of optical modulating elements comprises a PIN diode;

wherein at least one of the plurality of amplifiers comprises a current push-pull driver circuit.

24. An integrated optoelectronic device on a monolithic substrate comprising:

a plurality of optical modulating elements coupled in series,

where the plurality of optical modulating elements has an optical input port and an optical output port, and

each of the plurality of optical modulating elements has an electrical input port for modulating the propagation properties of a guided optical wave propagating in a respective one of the plurality of optical modulating elements,

and a plurality of amplifiers,

where each of the plurality of amplifiers has an input port, an output port and each output port is coupled to the electrical input port of a respective one of the plurality of optical modulating elements;

wherein the monolithic substrate comprises;

a first layer comprised of monocrystalline silicon,

a second layer comprised of dielectric material disposed on the first layer,

a third layer comprised of monocrystalline silicon disposed on the second layer,

a fourth layer comprised of dielectric material disposed on the third layer, and

a fifth layer comprised of monocrystalline silicon disposed on the fourth layer.