Method for vapor phase etching of silicon
First Claim
1. A method for making a micromechanical device, comprising:
- depositing a silicon material and one or more functional layers on a substrate;
removing the silicon material by providing a vapor phase etchant to the silicon material and removing the silicon material that is intervening between functional layers and/or between a functional layer and the substrate where a total gas pressure proximate to the silicon material is greater than 10 Torr, and wherein the vapor phase etchant is a non-plasma etchant and comprises a noble gas halide; and
wherein a micromechanical device is formed after removing the silicon material.
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Accused Products
Abstract
The etching of a material in a vapor phase etchant is disclosed where a vapor phase etchant is provided to an etching chamber at a total gas pressure of 10 Torr or more, preferably 20 Torr or even 200 Torr or more. The vapor phase etchant can be gaseous acid etchant, a noble gas halide or an interhalogen. The sample/workpiece that is etched can be, for example, a semiconductor device or MEMS device, etc. The material that is etched/removed by the vapor phase etchant is preferably silicon and the vapor phase etchant is preferably provided along with one or more diluents. Another feature of the etching system includes the ability to accurately determine the end point of the etch step, such as by creating an impedance at the exit of the etching chamber (or downstream thereof) so that when the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber. A first plasma or wet chemical etch (or both) can be performed prior to the vapor phase etch.
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Citations
160 Claims
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1. A method for making a micromechanical device, comprising:
depositing a silicon material and one or more functional layers on a substrate; removing the silicon material by providing a vapor phase etchant to the silicon material and removing the silicon material that is intervening between functional layers and/or between a functional layer and the substrate where a total gas pressure proximate to the silicon material is greater than 10 Torr, and wherein the vapor phase etchant is a non-plasma etchant and comprises a noble gas halide; and
wherein a micromechanical device is formed after removing the silicon material.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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40. A method for making a micromechanical device, comprising:
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depositing a silicon material on a substrate; depositing a layer other than silicon on the silicon material so as to form a sample to be etched; providing the sample to be etched to an etching chamber;
providing a non-plasma vapor phase etchant to the silicon material in the etching chamber; and
etching the silicon material from between the layer other than silicon and the substrate with an etchant comprising a noble gas halide, wherein the total gas pressure in the etching chamber proximate to the silicon material during the etch is 10 Torr or greater; andwherein a micromechanical device is feinted alter etching the silicon. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111, 112, 113, 114, 115, 116, 117, 118, 119, 120, 121, 122, 123, 124, 125, 126, 127, 128, 129, 130, 131, 132, 133, 134, 135, 136, 137, 138, 139, 140, 141, 142, 143, 144, 145, 146, 147, 148, 149, 150, 151, 152, 153, 154, 155, 156, 157, 158, 159, 160)
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Specification