Method for producing p-type group III nitride compound semiconductor
First Claim
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1. A method of producing p-type Group III nitride compound semiconductor, comprising:
- forming a first Group III nitride compound semiconductor layer doped with p-type impurities;
forming a second Group III nitride compound semiconductor layer which is at least one of substantially undoped, doped with n-type impurities, and doped with n-type and p-type impurities, such that an amount of impurities in said second Group III nitride compound semiconductor layer is less than an amount of impurities in said first Group III nitride compound semiconductor layer; and
reducing a resistance one of after and during said forming said second Group III nitride compound semiconductor layer.
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Abstract
A second Group III nitride compound semiconductor layer not doped with any impurities or doped with n-type impurities or with n-type and p-type impurities is formed on a first Group III nitride compound semiconductor layer doped with p-type impurities. Resistance is reduced by a heat treatment after or during the formation of the second Group III nitride compound semiconductor layer.
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20 Claims
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1. A method of producing p-type Group III nitride compound semiconductor, comprising:
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forming a first Group III nitride compound semiconductor layer doped with p-type impurities; forming a second Group III nitride compound semiconductor layer which is at least one of substantially undoped, doped with n-type impurities, and doped with n-type and p-type impurities, such that an amount of impurities in said second Group III nitride compound semiconductor layer is less than an amount of impurities in said first Group III nitride compound semiconductor layer; and reducing a resistance one of after and during said forming said second Group III nitride compound semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method of forming a light-emitting diode, comprising:
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forming a first Group III nitride compound semiconductor layer doped with p-type impurities; forming a second Group III nitride compound semiconductor layer on said first Group III nitride compound semiconductor layer such that an amount of impurities in said second Group III nitride compound semiconductor layer is less tan an amount of impurities in said first Group III nitride compound semiconductor layer; and after a beginning of said forming said second Group III nitride compound semiconductor layer, performing a heat treatment to reduce an electrical resistivity of said first Group III nitride compound semiconductor layer, wherein said second Group III nitride compound semiconductor layer is at least one of substantially undoped, doped with n-type impurities, and doped with n-type and p-type impurities.
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