Enhanced substrate contact for a semiconductor device
First Claim
1. A method of forming a semiconductor structure in a semiconductor wafer, the method comprising the steps of:
- forming an epitaxial layer on a least a portion of a semiconductor substrate of a first conductivity type;
forming at least one trench in an upper surface of the semiconductor wafer and partially into the epitaxial layer;
forming at least one diffusion region between a bottom wall of the at least one trench and the substrate, the at least one diffusion region providing an electrical path between the bottom wall of the at least one trench and the substrate;
doping at least one or more sidewalls of the at least one trench with a first impurity so as to form an electrical path between an upper surface of the epitaxial layer and the at least one diffusion region; and
substantially filling the at least one trench with a filler material;
wherein the step of doping at least one or more sidewalls of the at least one trench is performed after the step of forming the at least one diffusion region.
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Accused Products
Abstract
A technique for forming a semiconductor structure in a semiconductor wafer includes the steps of forming an epitaxial layer on a least a portion of a semiconductor substrate of a first conductivity type and forming at least one trench in an upper surface of the semiconductor wafer and partially into the epitaxial layer. The method further includes the step of forming at least one diffusion region between a bottom wall of the trench and the substrate, the diffusion region providing an electrical path between the bottom wall of the trench and the substrate. One or more sidewalls of the trench are doped with a first impurity of a known concentration level so as to form an electrical path between an upper surface of the epitaxial layer and the at least one diffusion region. The trench is then filled with a filler material.
8 Citations
19 Claims
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1. A method of forming a semiconductor structure in a semiconductor wafer, the method comprising the steps of:
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forming an epitaxial layer on a least a portion of a semiconductor substrate of a first conductivity type; forming at least one trench in an upper surface of the semiconductor wafer and partially into the epitaxial layer; forming at least one diffusion region between a bottom wall of the at least one trench and the substrate, the at least one diffusion region providing an electrical path between the bottom wall of the at least one trench and the substrate; doping at least one or more sidewalls of the at least one trench with a first impurity so as to form an electrical path between an upper surface of the epitaxial layer and the at least one diffusion region; and substantially filling the at least one trench with a filler material; wherein the step of doping at least one or more sidewalls of the at least one trench is performed after the step of forming the at least one diffusion region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification