Capacitor

• US 7,042,034 B2
• Filed: 01/16/2004
• Issued: 05/09/2006
• Est. Priority Date: 09/12/2001
• Status: Expired due to Fees

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Hong, Kwon
• Primary Examiner(s): Smith, Zandra V.
• Assistant Examiner(s): Thomas, Toniae M.
• Application Number:
  US10/759,457
• Publication Number:
  US 20040147088A1
• Time in Patent Office: 844 Days
• Field of Search: 257295-296, 257/306, 257/310, 257/532, 257/311, 257/E21.011, 438/3, 438238-240, 438253-256, 438/381, 438396-399
• US Class Current: 257/295
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 28/90 having vertical extensions

Abstract

The disclosure provides a capacitor including a lower electrode, a surface of which can be formed of Pt, and an inner part of which can be formed of metal having good antioxidant properties. The inner part of the lower electrode can be formed by depositing Ru or Ir with an electro plating process. It is possible to improve the leakage current characteristics by forming the surface of the lower electrode with Pt. Also it is possible to perform a thermal treatment at a high temperature in an oxygen atmosphere, because the inner part of the lower electrode resists or prevents diffusion of oxygen, so that a high dielectric layer can be obtained.

Claims

1. A capacitor comprising:

a lower electrode formed on a substrate, the lower electrode including a metal pattern made by a single material, a seed layer comprising Pt between the substrate and the metal pattern, and a layer comprising Pt covering an upper surface and sidewalls of the metal pattern, wherein the metal pattern is formed of a material capable of forming a conductive oxide;

a dielectric layer formed on the lower electrode; and

an upper electrode formed on the dielectric layer.

2. The capacitor as recited in claim 1, wherein the metal pattern in formed comprising a metal selected from the group consisting of Ru and Ir.

3. The capacitor as recited in claim 1, wherein the seed layer comprising Pt covers sidewalls and a bottom surface of the metal pattern.