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Backside thinning of image array devices

  • US 7,042,060 B2
  • Filed: 07/15/2004
  • Issued: 05/09/2006
  • Est. Priority Date: 01/31/2003
  • Status: Active Grant
First Claim
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1. A CMOS imaging device supported on a die, said die having a reverse side and a front side, said CMOS imaging device comprising a pixel array disposed on a first areal portion of said die, circuits for readout of said pixel array disposed on another areal portion of said die, a region of said reverse side of said die thinned to a thickness in the range 2 to 20 μ

  • m, said region of said reverse side limited to the area of projection of said pixel array on the corresponding portion of said front side.

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