Group III nitride compound semiconductor device

• US 7,042,089 B2
• Filed: 06/17/2004
• Issued: 05/09/2006
• Est. Priority Date: 03/31/2000
• Status: Expired due to Term

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Uemura, Toshiya, Ota, Koichi, Nagasaka, Naohisa, Hirano, Atsuo
• Primary Examiner(s): TRAN, MAI HUONG C
• Application Number:
  US10/869,629
• Publication Number:
  US 20040232454A1
• Time in Patent Office: 691 Days
• Field of Search: 257/E21.508, 257/E21.511, 257/E23.124, 257/E25.02, 257/E33.059, 438/114, 438/33, 438/108, 438/112, 438/127
• US Class Current: 257/745
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/1301 Thyristor
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained.

That is, in the present invention, in a device having an outermost diameter of not smaller than 700 μm, a distance from an n electrode to a farthest point of a p electrode is selected to be not larger than 500 μm.

Claims

1. A Group III nitride compound semiconductor device, which forms a quadrilateral in a plan view, said device comprising:

an n electrode comprising;

an n seat electrode centrally and adjacently disposed to a first side of said quadrilateral; and

an n auxiliary electrode comprising a C-shape, said C-shape being attached to said n seat electrode at the middle; and

a p electrode comprising;

a p seat electrode centrally and adjacently disposed to a second side of said quadrilateral, said second side being opposite to said first side; and

a first p auxiliary electrode that extends symmetrically from said p seat electrode and is parallel to said second side.

2. A Group III nitride compound semiconductor device according to claim 1, wherein a distance from said n electrode to a farthest point of said p electrode is not larger than 500 μ

m.

3. A Group III nitride compound semiconductor device according to claim 1, wherein an outermost diameter of said Group III nitride compound semiconductor device is not smaller than 700 μ

m.

4. A Group III nitride compound semiconductor device according to claim 1, wherein said quadrilateral comprises a square having a length of 1000 μ

m on each side.

5. A Group III nitride compound semiconductor device according to claim 1, wherein said C-shape comprises one of a circular C-shape and an elliptical C-shape.

6. A Group III nitride compound semiconductor device according to claim 1, further comprising:

a second p auxiliary electrode disposed within an area surrounded by said C-shape of said n auxiliary electrode.

7. A Group III nitride compound semiconductor device according to claim 6, further comprising:

a third auxiliary p electrode disposed adjacent to a first end of said first side; and

a fourth auxiliary p electrode disposed adjacent to a second end of said first side.

8. A Group III nitride compound semiconductor device according to claim 7, wherein said third auxiliary p electrode and said fourth auxiliary electrode extend parallel to and orthogonally to said first side.

9. A quadrilateral Group III nitride compound semiconductor device comprising:

an n-electrode disposed on an n-type layer; and

a p-electrode disposed on a multilayered stack including said n-type layer and a light-emitting layer, wherein

said n electrode comprises;

an n seat electrode centrally and adjacently disposed to a first side of said quadrilateral; and

an n auxiliary electrode comprising a C-shape, said C-shape being attached to said n seat electrode at the middle; and

said p electrode comprises;

a p seat electrode centrally and adjacently disposed to a second side of said quadrilateral, said second side being opposite to said first side; and

a first p auxiliary electrode that extends symmetrically from said p seat electrode and is parallel to said second side.

10. A Group III nitride compound semiconductor device according to claim 9, wherein a distance from said n electrode to a farthest point of said p electrode is not larger than 500 μ

m.

11. A Group III nitride compound semiconductor device according to claim 9, wherein an outermost diameter of said Group III nitride compound semiconductor device is not smaller than 700 μ

m.

12. A Group III nitride compound semiconductor device according to claim 9, wherein said quadrilateral comprises a square having a length of 1000 μ

m on each side.

13. A Group III nitride compound semiconductor device according to claim 9, wherein said C-shape comprises one of a circular C-shape and an elliptical C-shape.

14. A Group III nitride compound semiconductor device according to claim 9, further comprising:

a second p auxiliary electrode disposed within an area surrounded by said C-shape of said n auxiliary electrode.

15. A Group III nitride compound semiconductor device according to claim 9, further comprising:

a third auxiliary p electrode disposed adjacent to a first end of said first side; and

a fourth auxiliary p electrode disposed adjacent to a second end of said first side.

16. A Group III nitride compound semiconductor device according to claim 15, wherein said third auxiliary p electrode and said fourth auxiliary electrode extend parallel to and orthogonally to said first side.