×

Low power consumption MIS semiconductor device

  • US 7,042,245 B2
  • Filed: 04/09/2003
  • Issued: 05/09/2006
  • Est. Priority Date: 10/25/2002
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device comprising:

  • a logic gate constructed of an insulated gate field effect transistor having a first gate insulation film, and receiving a voltage of an internal power node as an operating power source voltage to operate, for processing a received signal;

    a first switching transistor connected between said internal power node and a first power source node, having a second gate insulation film greater in thickness than said first gate insulation film, and rendered selectively conductive for coupling said first power source node with said internal power node in response to a switch control signal; and

    a switch circuit for switching an amplitude of said switch control signal in response to an amplitude control signal for selectively applying one of the switch control signal having the amplitude switched and the switch control signal having the amplitude non-switched to said first switching transistor.

View all claims
  • 6 Assignments
Timeline View
Assignment View
    ×
    ×