Image sensor having thin film transistor and photoelectric conversion element
First Claim
Patent Images
1. A semiconductor device comprising:
- a substrate;
a photoelectric conversion element comprising a photosensitive semiconductor film interposed between first and second electrodes;
a reset transistor;
an amplification transistor wherein a gate of the amplification transistor is connected to the first electrode of the photoelectric conversion element;
a selection transistor wherein a drain current of the amplification transistor is output to an output line through at least the selection transistor;
a power source line electrically connectable to the first electrode of the photoelectric conversion device and a gate of the amplification transistor through the reset transistor;
a reset line connected to a gate of the reset transistor; and
an interlayer insulating film formed over the reset transistor, the amplification transistor and the selection transistor.
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Abstract
A display device using a novel semiconductor device, which includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, that is, which has both a camera function and a display function, and is made intelligent is provided and a method of manufacturing the same is also provided. One pixel includes a semiconductor device for display and a semiconductor for light reception, that is, one pixel includes semiconductor devices (insulated gate-type field effect semiconductor device) for controlling both display and light reception, so that the display device having a picture reading function is made miniaturized and compact.
54 Citations
20 Claims
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1. A semiconductor device comprising:
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a substrate; a photoelectric conversion element comprising a photosensitive semiconductor film interposed between first and second electrodes; a reset transistor; an amplification transistor wherein a gate of the amplification transistor is connected to the first electrode of the photoelectric conversion element; a selection transistor wherein a drain current of the amplification transistor is output to an output line through at least the selection transistor; a power source line electrically connectable to the first electrode of the photoelectric conversion device and a gate of the amplification transistor through the reset transistor; a reset line connected to a gate of the reset transistor; and an interlayer insulating film formed over the reset transistor, the amplification transistor and the selection transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a substrate; a photoelectric conversion element comprising a photosensitive semiconductor film interposed between first and second electrodes; a reset transistor; an amplification transistor wherein a gate of the amplification transistor is connected to the first electrode of the photoelectric conversion element; a selection transistor wherein a drain current of the amplification transistor is output to an output line through at least the selection transistor; a power source line electrically connectable to the first electrode of the photoelectric conversion device and a gate of the amplification transistor through the reset transistor; a reset line connected to a gate of the reset transistor; and a first interlayer insulating film formed over the reset transistor, the amplification transistor and the selection transistor wherein said photoelectric conversion element is formed on said interlayer insulating film; a second interlayer insulating film formed over said photoelectric conversion element. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a substrate; a photoelectric conversion element comprising a photosensitive semiconductor film interposed between first and second electrodes; a reset transistor; an amplification transistor wherein a gate of the amplification transistor is connected to the first electrode of the photoelectric conversion element; a selection transistor wherein a drain current of the amplification transistor is output to an output line through at least the selection transistor; a power source line electrically connectable to the first electrode of the photoelectric conversion device and a gate of the amplification transistor through the reset transistor; a reset line connected to a gate of the reset transistor; a first interlayer insulating film formed over the reset transistor, the amplification transistor and the selection transistor wherein the photoelectric conversion element is formed over the first interlayer insulating film; a second interlayer insulating film formed over the photoelectric conversion element; and a pixel electrode formed over the second interlayer insulating film. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification