Alignment strategy optimization method

• US 7,042,552 B1
• Filed: 11/17/2004
• Issued: 05/09/2006
• Est. Priority Date: 11/17/2004
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Swinnen, Bart, Van Bilsen, Franciscus Bernardus Maria, Werkman, Roy
• Primary Examiner(s): NGUYEN, HUNG
• Application Number:
  US10/990,335
• Publication Number:
  US 20060103822A1
• Time in Patent Office: 538 Days
• Field of Search: 355/52, 355/53, 355/55, 355/67, 355/77, 430/311, 438/14, 250/548, 356399-401
• US Class Current: 355/55
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: G03F 9/7046 Strategy, e.g. mark, sensor or wavelength selection

Abstract

The invention relates to a method of optimizing an alignment strategy for processing batches of substrates in a lithographic projection apparatus. First, all substrates in a plurality of batches of substrates in the lithographic projection apparatus are sequentially aligned and exposed using a predefined alignment strategy. Then, alignment data is determined for each substrate in the plurality of batches of substrates. Next, at least one substrate in each batch of substrates is selected to render a set of selected substrates including at least one substrate in each batch. In a metrology tool, overlay data for each of the selected substrates is determined. Then, overlay indicator values for a predefined overlay indicator are calculated for the predefined alignment strategy and for other possible alignment strategies. In this calculation, the alignment data and the overlay data of the selected substrates is used. Finally, an optimal alignment strategy is determined, the strategy being defined as alignment strategy among the predefined alignment strategy and the other possible alignment strategies with a lowest overlay indicator value.

Claims

1. A method of optimizing an alignment strategy for processing batches of substrates in a lithographic projection apparatus, said method comprising:

sequentially aligning and exposing substrates in a plurality of batches of substrates in accordance with a predetermined alignment strategy;

determining alignment data for each substrate in said plurality of batches of substrates;

selecting at least one substrate from each batch of substrates to render a set of selected substrates;

determining overlay data for each of said selected substrates;

calculating overlay indicator values of a predefined overlay indicator for said predetermined alignment strategy and for additional alignment strategies based on said alignment data and said overlay data of said set of selected substrates; and

determining an optimal alignment strategy from said predetermined alignment strategy and additional alignment strategies based on a lowest overlay indicator value.

2. The method of claim 1, wherein determining overlay data comprises:

measuring position errors for a plurality of overlay targets present on each of said selected substrates to produce measured overlay data; and

determining said overlay data by applying a least squares model to said measured overlay data.

3. The method of claim 1, wherein said calculating of said overlay indicator values comprises:

calculating, for all selected substrates, derived overlay data using said overlay data corresponding to said predetermined alignment strategy and said alignment data corresponding to said additional alignment strategies;

calculating said overlay indicator values for said additional alignment strategies using said derived overlay data.

4. The method of claim 1, wherein the at least one predetermined alignment strategy comprises one or more of:

(a) using a predefined alignment mark type, (b) using a predefined number of alignment marks on a substrate, (c) using predefined positions of alignment marks on a substrate, (d) using a measurement beam with a predefined wavelength in an alignment system or combination of wavelengths, (e) using a predefined diffraction order in said alignment system or combination of diffraction orders, (f) using a predefined number of wafer model parameters, (g) using a predefined position detection algorithm, or (h) using a predefined alignment system.

5. The method of claim 1, wherein said alignment data and said overlay data are represented by wafer model parameters.

6. The method of claim 5, wherein more than one substrate in each batch is selected to be measured and wherein said method further comprises:

calculating, for each selected batch, an average value of all wafer model parameters over all substrates;

subtracting for each selected batch, and for each wafer model parameter, said average value from said wafer model parameter values to render corrected wafer model parameter values; and

calculating the overlay indicator using said corrected wafer model parameter values.

7. A system comprising:

a lithographic projection apparatus configured to align substrates in a plurality of batches of substrates, transfer a pattern from a patterning device onto the substrates and to produce alignment data in accordance with a predetermined alignment strategy;

a metrology tool arranged to measure overlay of substrates selected from each batch; and

a processor arranged to receive overlay data of selected substrates from said metrology tool and alignment data from said lithographic projection apparatus,

wherein said processor calculates overlay indicator values of a predefined overlay indicator for said predetermined alignment strategy and for additional alignment strategies based on said alignment data and said overlay data and determines an optimal alignment strategy from said predetermined alignment strategy and additional alignment strategies based on a lowest overlay indicator value.

8. A device manufacturing method comprising:

conditioning a beam of radiation;

configuring the conditioned beam of radiation with a desired pattern in its cross-section;

sequentially aligning and projecting the patterned beam of radiation onto substrates in a plurality of batches in accordance with a predetermined alignment strategy;

determining alignment data for each of the substrates in said plurality of batches of substrates;

selecting at least one substrate from each batch of substrates to render a set of selected substrates;

determining overlay data for each of said selected substrates;

calculating overlay indicator values of a predefined overlay indicator for said predetermined alignment strategy and for additional alignment strategies based on said alignment data and said overlay data of said set of selected substrates; and

determining an optimal alignment strategy from said predetermined alignment strategy and additional alignment strategies based on the lowest overlay indicator value.