Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and method, apparatus, and system for implementing the same
First Claim
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1. A method for cleaning and drying a front and a back surface of a semiconductor substrate, the method comprising:
- brush scrubbing the back surface of the semiconductor substrate using a brush scrubbing chemistry;
forming a front fluid meniscus with the front surface of the semiconductor substrate and a back fluid meniscus with the back surface of the semiconductor substrate, the forming of the front and the back fluid menisci being performed after the brush scrubbing of the back surface; and
scanning the front surface of the semiconductor substrate and the back surface of the semiconductor substrate by moving the front meniscus along the front surface of the semiconductor substrate and the back fluid meniscus along the back surface of the semiconductor substrate, the front and back fluid menisci being formed using a chemistry that is compatible with the brush scrubbing chemistry,wherein scanning the front surface of the substrate and the back surface of the substrate is configured to clean and dry the front surface of the substrate and the back surface of the substrate.
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Abstract
A method for cleaning and drying a front and a back surface of a substrate is provided. The method includes brush scrubbing the back surface of the substrate using a brush scrubbing fluid chemistry. The method further includes applying a front meniscus onto the front surface of the substrate upon completing the brush scrubbing of the back surface. The front meniscus includes a front cleaning chemistry that is chemically compatible with the brush scrubbing fluid chemistry.
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Citations
19 Claims
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1. A method for cleaning and drying a front and a back surface of a semiconductor substrate, the method comprising:
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brush scrubbing the back surface of the semiconductor substrate using a brush scrubbing chemistry; forming a front fluid meniscus with the front surface of the semiconductor substrate and a back fluid meniscus with the back surface of the semiconductor substrate, the forming of the front and the back fluid menisci being performed after the brush scrubbing of the back surface; and scanning the front surface of the semiconductor substrate and the back surface of the semiconductor substrate by moving the front meniscus along the front surface of the semiconductor substrate and the back fluid meniscus along the back surface of the semiconductor substrate, the front and back fluid menisci being formed using a chemistry that is compatible with the brush scrubbing chemistry, wherein scanning the front surface of the substrate and the back surface of the substrate is configured to clean and dry the front surface of the substrate and the back surface of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for preparing a semiconductor substrate, the method comprising:
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brush scrubbing a back surface of the semiconductor substrate using a brush scrubbing chemistry; upon completing the brush scrubbing of the back surface, applying a front fluid meniscus onto a front surface of the semiconductor substrate, the front fluid meniscus being formed using a front cleaning chemistry, the front cleaning chemistry being chemically compatible with the brush scrubbing chemistry; and scanning the front surface of the semiconductor substrate by moving the front meniscus along the front surface of the semiconductor substrate. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method for preparing a semiconductor substrate, the method comprising:
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brush scrubbing a back surface of the semiconductor substrate using a brush scrubbing chemistry; upon completing the brush scrubbing of the back surface, applying a front fluid meniscus onto a front surface of the semiconductor substrate, the front fluid meniscus being formed using a front cleaning chemistry, the front cleaning chemistry being chemically compatible with the brush scrubbing chemistry so as to prevent chemical contamination of the front surface of the semiconductor substrate, wherein the brush scrubbing chemistry includes hydrofluoric acid and the front cleaning chemistry includes hydrofluoric acid; and scanning the front surface the semiconductor substrate moving the front meniscus along the front surface of the semiconductor substrate. - View Dependent Claims (17, 18, 19)
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Specification