×

Field-effect type semiconductor device for power amplifier

  • US 7,045,412 B2
  • Filed: 07/26/2004
  • Issued: 05/16/2006
  • Est. Priority Date: 10/02/2001
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of fabricating a field-effect type semiconductor device, comprising the steps of:

  • forming a first SiGe layer having a first conductivity-type and high impurity concentration on a major surface of an Si substrate having the first conductivity-type;

    forming a second SiGe layer having the first conductivity-type and low impurity concentration on a major surface of said first SiGe layer;

    forming an Si layer having low impurity concentration on a major surface of said second SiGe layer, thus completing a semiconductor multi-layer structure;

    forming a groove for isolating active regions in a major surface of said semiconductor multi-layer structure;

    embedding an insulating material in said groove;

    impaling an impurity into said active region;

    forming a gate insulating film on a surface of said active region;

    forming a gate electrode on said gate insulating film;

    forming a drain offset region in said active region in self-alignment with said gate electrode;

    forming, in said active region, a drain region being separated from the edge of said gate electrode, contacting said drain offset region in self-alignment with said gate electrode and having an impurity concentration higher than that of said offset region, and a source region in self-alignment with said gate electrode;

    exposing said first SiGe layer or said substrate in a region near said source region; and

    connecting said exposed portion and said source region by metal or metal silicide.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×