Method of fabricating radio frequency microelectromechanical systems (MEMS) devices on low-temperature co-fired ceramic (LTCC) substrates

• US 7,045,440 B2
• Filed: 09/17/2003
• Issued: 05/16/2006
• Est. Priority Date: 05/18/2001
• Status: Active Grant

• Current Assignee: Corporation for National Research Initiatives
• Original Assignee: Corporation for National Research Initiatives
• Inventors: Huff, Michael A., Ozgur, Mehmet
• Primary Examiner(s): Zarabian, Amir
• Assistant Examiner(s): Perkins, Pamela E
• Application Number:
  US10/663,986
• Publication Number:
  US 20050167047A1
• Time in Patent Office: 972 Days
• Field of Search: 298/30, 298/32, 298/40, 298/46, 298/54, 333/185, 333/246, 333/247, 333/249, 333/250, 333/256, 333/258, 333/259, 333/262, 333/263, 336/200, 336/232, 343/707.MS, 361/761, 361/762, 361/763, 361/764, 361/780, 361/784, 361/792, 361/793, 361/794, 361/795, 361/803, 257/275, 257/415, 257/664, 257/703, 257/704, 257/724, 257/728, 257/798, 438/107, 438/118, 438/125, 438/126, 438/455, 438/456
• US Class Current: 438/456
• CPC Class Codes: B81B 2201/016 having a bridge fixed on two ends and connected to one or more dimples
• CPC Class Codes: B81B 2207/015 the micromechanical device and the control or processing electronics being integrated on the same substrate
• CPC Class Codes: B81B 2207/07 Interconnects
• CPC Class Codes: B81B 2207/092 Buried interconnects in the substrate or in the lid
• CPC Class Codes: B81B 2207/095 through the lid
• CPC Class Codes: B81B 2207/096 through the substrate
• CPC Class Codes: B81B 7/0064 for protecting against electromagnetic or electrostatic interferences
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: B81C 2203/035 Soldering
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H01G 5/16 using variation of distance between electrodes
• CPC Class Codes: H01G 5/18 due to change in inclination, e.g. by flexing, by spiral wrapping
• CPC Class Codes: H01G 5/40 Structural combinations of variable capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations
• CPC Class Codes: H01H 2057/006 Micromechanical piezoelectric relay
• CPC Class Codes: H01H 2059/0072 with stoppers or protrusions for maintaining a gap, reducing the contact area or for preventing stiction between the movable and the fixed electrode in the attracted position
• CPC Class Codes: H01H 59/0009 making use of micromechanics
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2924/15153 the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01P 1/127 Strip line switches
• CPC Class Codes: H01P 1/184 Strip line phase-shifters H01P1/181, H01P1/185, H01P1/19 take precedence
• CPC Class Codes: H01Q 1/38 : formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 15/0013 : said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
• CPC Class Codes: H01Q 15/004 : using superconducting materials or magnetised substrates
• CPC Class Codes: H01Q 21/0087 : Apparatus or processes specially adapted for manufacturing antenna arrays manufacturing waveguides H01P11/00
• CPC Class Codes: H01Q 3/26 : varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture H01Q3/12, H01Q3/22, H01Q3/24 take precedence
• CPC Class Codes: H05K 1/0306 : Inorganic insulating substrates, e.g. ceramic, glass
• CPC Class Codes: H05K 1/16 : incorporating printed electric components, e.g. printed resistor, capacitor, inductor

Abstract

A phased-array antenna system and other types of radio frequency (RF) devices and systems using microelectromechanical switches (“MEMS”) and low-temperature co-fired ceramic (“LTCC”) technology and a method of fabricating such phased-array antenna system and other types of radio frequency (RF) devices are disclosed. Each antenna or other type of device includes at least two multilayer ceramic modules and a MEMS device fabricated on one of the modules. Once fabrication of the MEMS device is completed, the two ceramic modules are bonded together, hermetically sealing the MEMS device, as well as allowing electrical connections between all device layers. The bottom ceramic module has also cavities at the backside for mounting integrated circuits. The internal layers are formed using conducting, resistive and high-k dielectric pastes available in standard LTCC fabrication and low-loss dielectric LTCC tape materials.

Claims

1. A method of forming a radio frequency (“

RF”

) device including at least one MEMS device comprising the steps of;

fabricating a first module from a first plurality of low-temperature co-fired ceramic (“

LTCC”

) layers, the first plurality of layers forming at least a first circuit used in the operation of the MEMS device;

fabricating a second module from a second plurality of low-temperature co-fired ceramic (“

LTCC”

) layers, the second plurality of layers forming at least a second circuit used in the operation of the MEMS device;

polishing a surface of a front layer of the first module to be used as a substrate after fabrication of the first module is completed;

fabricating on the front layer the at least one MEMS device using MEMS processing; and

bonding the first and second modules together to thereby form a cavity containing the at least one MEMS device.

2. The method of forming a RF device as recited in claim 1 further comprising the steps of polishing a surface of a back layer of the second module to be used as a cover after fabrication of the second module is completed and applying two-component brazing materials on the front and back layers prior to bonding the first and second modules together.

3. The method of forming a RF device as recited in claim 2 wherein the step of polishing the surfaces of the front and back layers is performed using a mechanical or chemical/mechanical polish.

4. The method of forming a RF device as recited in claim 1 wherein the step of bonding the first and second modules together is performed using eutectic bonding.

5. The method of forming a RF device as recited in claim 1 wherein the step of bonding the first and second modules together is performed using an insulating layer such as glass-frit.

6. The method of forming a RF device as recited in claim 1 wherein the step of bonding the first and second modules together is performed using an insulating layers such as a thermalsetting polyimide film.

7. The method of forming a RF device as recited in claim 1 wherein the step of applying two-component brazing materials on the front and back layers comprises the steps of:

depositing a plurality of first contact pads on a front layer of the first module;

planarizing the front layer of the first module;

depositing an adhesion layer and a soldering conductor on the first contact pads;

firing the first module at a temperature greater than 800°

C.;

depositing a plurality of second contact pads on a back layer of the second module;

planarizing the back layer of the second module;

depositing an adhesion layer and a soldering conductor on the second contact pads; and

firing the first module at a temperature greater than 800°

C.

8. The method of forming a RF device as recited in claim 1 wherein the step of polishing the surfaces of the front and back layers is performed using a mechanical or chemical/mechanical polish.

9. The method of forming a RF device as recited in claim 1 wherein the step of bonding the first and second modules together is performed at low pressure and in a low-humidity environment.

10. The method of forming a RF device as recited in claim 1 wherein the step of bonding the first and second modules together is performed in an inert gas atmosphere.

11. The method of forming a RF device as recited in claim 1 wherein the first and second modules are bonded together to thereby form a hermetically sealed cavity containing the at least one MEMS device.

12. The method of forming a RF device as recited in claim 1 wherein the step of fabricating the MEMS device comprises forming a switch.

13. The method of forming a RF device as recited in claim 1 further comprising the step of forming vertical interconnects extending through the first and second pluralities of LTCC layers.

14. The method of forming a RF device as recited in claim 1 further comprising the step of forming in the first plurality of LTCC layers a buffer layer that is a substrate on which the at least one MEMS device is fabricated.

15. The method of forming a RF device as recited in claim 1 further comprising the step of bonding to one of the first plurality of LTCC layers at least one integrated circuit.

16. The method of forming a RF device as recited in claim 15 further comprising the step of forming in the first plurality of LTCC layers an interconnect layer for interconnecting the integrated circuit to the MEMS device.

17. The method of forming a RF device as recited in claim 15 further comprising the step of flip-chip bonding the integrated circuits to screen-printed surface metal patterns on a layer of the first plurality of LTCC layers.

18. The method of forming a RF device as recited in claim 15 further comprising the step of wire-bonding the integrated circuits to screen-printed surface metal patterns on a layer of the first plurality of LTCC layers.

19. The method of forming a RF device as recited in claim 15 further comprising the step of flip-chip bonding the integrated circuits to photo-patterned surface metal patterns on a layer of the first plurality of LTCC layers.

20. The method of forming a RF device as recited in claim 15 further comprising the step of wire-bonding the integrated circuits to photo-patterned surface metal patterns on a layer of the first plurality of LTCC layers.

21. The method of forming a RF device as recited in claim 1 further comprising the step of fabricating in the first plurality of LTCC layers a plurality of buried-in discrete components.

22. The method of forming a RF device as recited in claim 21 wherein the discrete components include at least one device from the group consisting of resistors, capacitors and inductors.

23. The method of forming a RF device as recited in claim 1 further comprising the step of forming in the first and second pluralities of LTCC layers screen-printed buried metal patterns that are used to define interconnections and passive microwave devices.

24. The method of forming a RF device as recited in claim 23 wherein the passive microwave devices include at least one device from the group consisting of transmission lines, couplers, and dividers.

25. The method of forming a RF device as recited in claim 1 further comprising the step of forming in the first and second pluralities of LTCC layers photo-patterned buried metal patterns that are used to define interconnections and passive microwave devices.

26. The method of forming a RF device as recited in claim 25 wherein the passive microwave devices include at least one device from the group consisting of transmission lines, couplers, and dividers.

27. The method of forming a RF device as recited in claim 1 further comprising the step of forming in the second plurality of LTCC layers ground shielding extending through said layers to shield the at least one MEMS device from radiating.

28. The method of forming a RF device as recited in claim 1 wherein the MEMS process is performed in large-area-processing tools or standard semiconductor tools.

29. A method of forming an electrical device comprising the steps of:

fabricating a first module from a first plurality of low-temperature co-fired ceramic (“

LTCC”

) layers, the first plurality of layers forming at least a first circuit used in the operation of the electrical device;

fabricating a second module from a second plurality of low-temperature co-fired ceramic (“

LTCC”

) layers, the second plurality of layers forming at least a second circuit used in the operation of the electrical device;

polishing a surface of a front layer of the first module to be used as a substrate after fabrication of the first module is completed;

fabricating on the front layer at least one microelectromechanical device (“

MEMS”

) using standard MEMS processing; and

bonding the first and second modules together to thereby form a cavity containing the at least one MEMS device.

30. The method of forming an MEMS device as recited in claim 29 further comprising the steps of polishing a surface of a back layer of the second module to be used as a cover after fabrication of the second module is completed and applying two-component brazing materials on the front and back layers prior to bonding the first and second modules together.

31. The method of forming a MEMS device as recited in claim 29 wherein the step of bonding the first and second modules together is performed using eutectic bonding.

32. The method of forming a MEMS device as recited in claim 29 wherein the step of bonding the first and second modules together is performed using an insulating layer such as glass-frit.

33. The method of forming a MEMS device as recited in claim 29 wherein the step of bonding the first and second modules together is performed using an insulating layers such as a thermal setting polyimide film.

34. The method of forming an electrical device as recited in claim 29 wherein the step of applying two-component brazing materials on the front and back layers comprises the steps of:

depositing a plurality of first contact pads on a front layer of the first module;

planarizing the front layer of the first module;

depositing an adhesion layer and a soldering conductor on the first contact pads;

firing the first module at a temperature greater than 800°

C.;

depositing a plurality of second contact pads on a back layer of the second module;

planarizing the back layer of the second module;

depositing an adhesion layer and a soldering conductor on the second contact pads; and

firing the first module at a temperature greater than 800°

C.

35. The method of forming an electrical device as recited in claim 29 wherein the step of polishing surfaces of the front and back layers is performed using a mechanical or chemical/mechanical polish.

36. The method of forming an electrical device as recited in claim 29 wherein the step of bonding the first and second modules together is performed at low pressure and in a low-humidity environment.

37. The method of forming an electrical device as recited in claim 29 wherein the first and second modules are bonded together to thereby form a hermetically sealed cavity containing the at least one MEMS device.

38. The method of forming an electrical device as recited in claim 29 further comprising the step of forming vertical interconnects extending through the first and second pluralities of LTCC layers.

39. The method of forming an electrical device as recited in claim 38 wherein the vertical interconnects are metal-filled vias.

40. The method of forming an electrical device as recited in claim 29 further comprising the step of bonding to one of the first plurality of LTCC layers at least one integrated circuit.

41. The method of forming an electrical device as recited in claim 40 further comprising the step of forming in the first plurality of LTCC layers an interconnect layer for interconnecting the integrated circuit to the electrical device.

42. The method of forming an electrical device as recited in claim 29 further comprising the step of fabricating in the first plurality of LTCC layers a plurality of buried-in discrete components.

43. The method of forming an electrical device as recited in claim 29 wherein the MEMS process is performed in large-area-processing tools or standard semiconductor tools.

44. A method of forming a radiating element for an array antenna comprising the steps of:

fabricating a first module from a first plurality of low-temperature co-fired ceramic (“

LTCC”

) layers, the first plurality of layers forming at least a first circuit used in the operation of the array antenna;

fabricating a second module from a second plurality of low-temperature co-fired ceramic (“

LTCC”

) layers, the second plurality of layers forming at least a second circuit used in the operation of the array antenna;

polishing a surface of a front layer of the first module to be used as a substrate after fabrication of the first module is completed;

fabricating on the front layer at least one microelectromechanical switch (“

MEMS”

) using MEMS processing; and

bonding the first and second modules together to thereby form a cavity containing the at least one MEMS switch.

45. The method of forming a radiating element for an array antenna as recited in claim 44 further comprising the steps of polishing a surface of a back layer of the second module to be used as a cover after fabrication of the second module is completed and applying two-component brazing materials on the front and back layers prior to bonding the first and second modules together.

46. The method of forming a radiating element for an array antenna as recited in claim 45 wherein the step of polishing the surfaces of the front and back layers is performed using a mechanical or chemical/mechanical polish.

47. The method of forming a radiating element for an array antenna as recited in claim 45 wherein the step of bonding the first and second modules together is performed using eutectic bonding.

48. The method of forming a radiating element for an array antenna as recited in claim 44 wherein the step of bonding the first and second modules together is performed using an insulating layer such as glass-frit.

49. The method of forming a radiating element for an array antenna as recited in claim 44 wherein the step of bonding the first and second modules together is performed using an insulating layers such as a thermalsetting polyimide film.

50. The method of forming a radiating element for an array antenna as recited in claim 44 wherein the step of applying two-component brazing materials on the front and back layers comprises the steps of:

depositing a plurality of first contact pads on a front layer of the first module;

planarizing the front layer of the first module;

depositing an adhesion layer and a soldering conductor on the first contact pads;

firing the first module at a temperature greater than 800°

C.;

depositing a plurality of second contact pads on a back layer of the second module;

planarizing the back layer of the second module;

(optional)

depositing an adhesion layer and a soldering conductor on the second contact pads; and

firing the first module at a temperature greater than 800°

C.

51. The method of forming a radiating element for an array antenna as recited in claim 50 wherein the step of polishing the surfaces of the front and back layers is performed using a selectively protective and removable layer on exposed metal during polishing to prevent or reduce dishing.

52. The method of forming a radiating element for an array antenna as recited in claim 44 wherein the step of polishing the surfaces of the front and back layers is performed using a mechanical or chemical/mechanical polish.

53. The method of forming a radiating element for an array antenna as recited in claim 44 wherein the step of bonding the first and second modules together is performed at low pressure and in a low-humidity environment.

54. The method of forming a radiating element for an array antenna as recited in claim 53 further comprising the step of forming in the second plurality of LTCC layers ground shielding extending through said layers to shield the at least one radiating patch from radiating patches in other array antennas.

55. The method of forming a radiating element for an array antenna as recited in claim 44 wherein the step of bonding the first and second modules together is performed in an inert gas atmosphere.

56. The method of forming a radiating element for an array antenna as recited in claim 44 wherein the first and second modules are bonded together to thereby form a hermetically sealed cavity containing the at least one MEMS switch.

57. The method of forming a radiating element for an array antenna as recited in claim 44 wherein the MEMS switch is a phase shifter.

58. The method of forming a radiating element for an array antenna as recited in claim 44 further comprising the step of forming vertical interconnects extending through the first and second pluralities of LTCC layers.

59. The method of forming a radiating element for an array antenna as recited in claim 44 further comprising the step of forming a polarizer circuit in the second plurality of LTCC layers.

60. The method of forming a radiating element for an array antenna as recited in claim 44 further comprising the step of forming a power divider circuit and a band pass filter circuit in the first plurality of LTCC layers.

61. The method of forming a radiating element for an array antenna as recited in claim 44 further comprising the step of forming in the first plurality of LTCC layers a buffer layer that is a substrate on which the at least one MEMS phase shifter is fabricated.

62. The method of forming a radiating element for an array antenna as recited in claim 44 further comprising the step of bonding to one of the first plurality of LTCC layers at least one integrated circuit.

63. The method of forming a radiating element for an array antenna as recited in claim 62 further comprising the step of forming in the first plurality of LTCC layers an interconnect layer for interconnecting the integrated circuit to the array antenna.

64. The method of forming a radiating element for an array antenna as recited in claim 63 further comprising the step of flip-chip bonding the integrated circuits to screen-printed surface metal patterns on a layer of the first plurality of LTCC layers.

65. The method of forming a radiating element for an array antenna as recited in claim 63 further comprising the step of wire-bonding the integrated circuits to screen-printed surface metal patterns on a layer of the first plurality of LTCC layers.

66. The method of forming a radiating element for an array antenna as recited in claim 63 further comprising the step of flip-chip bonding the integrated circuits to photo-patterned surface metal patterns on a layer of the first plurality of LTCC layers.

67. The method of forming a radiating element for an array antenna as recited in claim 63 further comprising the step of wire-bonding the integrated circuits to photo-patterned surface metal patterns on a layer of the first plurality of LTCC layers.

68. The method of forming a radiating element for an array antenna as recited in claim 44 further comprising the step of forming in the second plurality of LTCC layers a plurality of radiating layers with at least one radiating patch fabricated on one of the radiating layers.

69. The method of forming a radiating element for an array antenna as recited in claim 44 further comprising the step of fabricating in the first plurality of LTCC layers a plurality of buried-in discrete components.

70. The method of forming a radiating element for an array antenna as recited in claim 69 wherein the discrete components are resistors, capacitors, and/or inductors.

71. The method of forming a radiating element for an array antenna as recited in claim 44 further comprising the step of forming in the first and second pluralities of LTCC layers screen-printed buried metal patterns that are used to define interconnections and passive microwave devices.

72. The method of forming a radiating element for an array antenna as recited in claim 71 wherein the passive microwave devices include at least one device from the group consisting of transmission lines, couplers, and dividers.

73. The method of forming a radiating element for an array antenna as recited in claim 44 further comprising the step of forming in the first and second pluralities of LTCC layers photo-patterned buried metal patterns that are used to define interconnections and passive microwave devices.

74. The method of forming a radiating element for an array antenna as recited in claim 73 wherein the passive microwave devices include at least one device from the group consisting of transmission lines, couplers, and dividers.

75. The method of forming a radiating element for an array antenna as recited in claim 74 wherein the at least one MEMS switch contained in the hermetically sealed cavity is coated with a surface treatment to prevent stiction.

76. The method of forming a radiating element for an array antenna as recited in claim 75 wherein the at least one MEMS switch is coated with a surface treatment selected from the group consisting of dichlorodimethylsilane (DDMS) monolayer and octadecyltrichlorosilane (OTS) self-assembled monolayer.

77. The method of forming a radiating element for an array antenna as recited in claim 44 wherein the MEMS process is performed in large-area-processing tools or standard semiconductor tools.

78. The method of forming a radiating element for an array antenna as recited in claim 44 wherein the at least one MEMS switch is sealed with a surface treatment to prevent stiction.

79. The method of forming a radiating element for an array antenna as recited in claim 78 wherein the at least one MEMS switch is sealed with a surface treatment selected from the group consisting of dichlorodimethylsilane (DDMS) monolayer and octadecyltrichlorosilane (OTS) self-assembled monolayer.

80. The method of forming a radiating element for an array antenna as recited in claim 78 wherein the at least one MEMS switch is sealed with a product that can be used on metal surfaces to minimize unintentional adhesion in mechanical switches or other contacting or near-contacting surfaces.

81. The method of forming a radiating element for an array antenna as recited in claim 44 wherein the at least one MEMS switch is sealed with a surface treatment to prevent stiction and maintain low-resistance contacts in the at least one MEMS switch by avoiding contamination and unwanted chemical reactions, such as oxidation.

82. A method of forming an array antenna comprising the steps of:

fabricating a plurality of radiating elements, each of the radiating elements being fabricated by forming at least one microelectromechanical (“

MEMS”

) switch on a first low-temperature co-fired ceramic (“

LTCC”

) module, and bonding a second LTCC module to the first LTCC module, whereby the MEMS switch is located in a cavity between the first and second LTCC modules;

forming a plurality of sub-array modules, each of the sub-array modules being formed from a plurality of radiating elements;

integrating the plurality of sub-array modules together to form the phased array antenna; and

connecting the plurality of sub-array modules to at least one amplifier.

83. A method of forming an electrical device comprising the steps of:

fabricating a first module from a first plurality of low-temperature co-fired ceramic (“

LTCC”

) layers, the first plurality of layers forming at least a first circuit used in the operation of the electrical device;

fabricating a second module from a second plurality of low-temperature co-fired ceramic (“

LTCC”

) layers, the second plurality of layers forming at least a second circuit used in the operation of the electrical device;

polishing a surface of a front layer of the first module to be used as a substrate after fabrication of the first module is completed;

fabricating on the front layer at least one microelectromechanical device (“

MEMS”

) using standard MEMS processing; and

bonding the first and second modules together to thereby form a cavity containing the at least one MEMS device.

84. The method of forming an array antenna as recited in claim 83 further comprising the steps of polishing a surface of a back layer of the second module to be used as a cover after fabrication of the second module is completed and applying two-component brazing materials on the front and back layers prior to bonding the first and second modules together.

85. The method of forming an array antenna as recited in claim 83 wherein the step of bonding the first and second modules together is performed using eutectic bonding.

86. The method of forming an array antenna as recited in claim 83 wherein the step of bonding the first and second modules together is performed using an insulating layer such as glass-frit.

87. The method of forming an array antenna as recited in claim 83 wherein the step of bonding the first and second modules together is performed using an insulating layers such as a thermal setting polyimide film.

88. The method of forming an electrical device as recited in claim 83 wherein the step of applying two-component brazing materials on the front and back layers comprises the steps of:

depositing a plurality of first contact pads on a front layer of the first module;

planarizing the front layer of the first module;

depositing an adhesion layer and a soldering conductor on the first contact pads;

firing the first module at a temperature greater than 800°

C.;

depositing a plurality of second contact pads on a back layer of the second module;

planarizing the back layer of the second module;

depositing an adhesion layer and a soldering conductor on the second contact pads; and

firing the first module at a temperature greater than 800°

C.

89. The method of forming an electrical device as recited in claim 83 wherein the step of polishing surfaces of the front and back layers is performed using a mechanical or chemical/mechanical polish.

90. The method of forming an electrical device as recited in claim 83 wherein the step of bonding the first and second modules together is performed at low pressure and in a low-humidity environment.

91. The method of forming an electrical device as recited in claim 83 wherein the first and second modules are bonded together to thereby form a hermetically sealed cavity containing the at least one MEMS device.

92. The method of forming an electrical device as recited in claim 83 further comprising the step of forming vertical interconnects extending through the first and second pluralities of LTCC layers.

93. The method of forming an electrical device as recited in claim 92 wherein the vertical interconnects are metal-filled vias.

94. The method of forming an electrical device as recited in claim 83 further comprising the step of bonding to one of the first plurality of LTCC layers at least one integrated circuit.

95. The method of forming an electrical device as recited in claim 94 further comprising the step of forming in the first plurality of LTCC layers an interconnect layer for interconnecting the integrated circuit to the electrical device.

96. The method of forming an electrical device as recited in claim 83 further comprising the step of fabricating in the first plurality of LTCC layers a plurality of buried-in discrete components.

97. The method of forming an electrical device as recited in claim 83 wherein the MEMS process is performed in large-area-processing tools or standard semiconductor tools.