Method of manufacturing semiconductor device that includes selectively adding a noble gas element
First Claim
1. A method of manufacturing a semiconductor device comprising the steps of:
- adding a metal element to a semiconductor film having an amorphous structure;
crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film;
forming an impurity region to which a noble gas element is selectively added in the crystalline semiconductor film; and
segregating the metal element in the impurity region containing the noble gas element by a second heat treatment.
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Accused Products
Abstract
Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1×1020/cm3 or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that impurity regions to which an element belonging to the group 18 of the periodic table is added are formed in a semiconductor film having a crystalline structure and gettering for segregating in the impurity regions a metal element contained in the semiconductor film is performed by heat treatment. Also, a one conductivity type impurity may be contained in the impurity regions.
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Citations
44 Claims
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1. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure; crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film; forming an impurity region to which a noble gas element is selectively added in the crystalline semiconductor film; and segregating the metal element in the impurity region containing the noble gas element by a second heat treatment. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure; crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film; irradiating the crystalline semiconductor film with laser light to improve crystallinity; forming an impurity region to which a noble gas element is selectively added in the crystalline semiconductor film; and segregating the metal element in the impurity region containing the noble gas element by a second heat treatment. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure; crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film; forming an impurity region to which a noble gas element is selectively added in the crystalline semiconductor film; and segregating the metal element in the impurity region containing the noble gas element by a second heat treatment; and removing the impurity region containing the noble gas element by etching. - View Dependent Claims (13, 14, 15, 16)
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17. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure; crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film; irradiating the crystalline semiconductor film with laser light to improve crystallinity; forming an impurity region to which a noble gas element is selectively added in the crystalline semiconductor film; and segregating the metal element in the impurity region containing the noble gas element by a second heat treatment; and removing the impurity region containing the noble gas element by etching. - View Dependent Claims (18, 19, 20, 21, 22)
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23. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure; crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film; forming a mask insulating film having an opening on the crystalline semiconductor film; forming an impurity region to which an ion of a noble gas element accelerated by an electric field is added in the crystalline semiconductor film through the opening; and segregating the metal element in the impurity region containing the ion of the noble gas element by a second heat treatment. - View Dependent Claims (24, 25, 26, 27)
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28. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure; crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film; irradiating the crystalline semiconductor film with laser light to improve crystallinity; forming a mask insulating film having an opening on the crystalline semiconductor film; forming an impurity region to which an ion of a noble gas element accelerated by an electric field is added in the crystalline semiconductor film through the opening; and segregating the metal element in the impurity region containing the ion of the noble gas element by a second heat treatment. - View Dependent Claims (29, 30, 31, 32, 33)
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34. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure; crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film; forming a mask insulating film having an opening on the crystalline semiconductor film; forming an impurity region to which an ion of a noble gas element accelerated by an electric field is added in the crystalline semiconductor film through the opening; segregating the metal element in the impurity region containing the ion of the noble gas element by a second heat treatment; and removing the impurity region containing the ion of the noble gas element by etching. - View Dependent Claims (35, 36, 37, 38)
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39. A method of manufacturing a semiconductor device comprising the steps of:
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adding a metal element to a semiconductor film having an amorphous structure; crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film; irradiating the crystalline semiconductor film with laser light to improve crystallinity; forming a mask insulating film having an opening on the crystalline semiconductor film; forming an impurity region to which an ion of a noble gas element accelerated by an electric field is added in the crystalline semiconductor film through the opening; segregating the metal element in the impurity region containing the ion of the noble gas element by a second heat treatment; and removing the impurity region containing the ion of the noble gas element by etching. - View Dependent Claims (40, 41, 42, 43, 44)
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Specification