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Method of manufacturing semiconductor device that includes selectively adding a noble gas element

  • US 7,045,444 B2
  • Filed: 12/19/2001
  • Issued: 05/16/2006
  • Est. Priority Date: 12/19/2000
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device comprising the steps of:

  • adding a metal element to a semiconductor film having an amorphous structure;

    crystallizing the semiconductor film by a first heat treatment to form a crystalline semiconductor film;

    forming an impurity region to which a noble gas element is selectively added in the crystalline semiconductor film; and

    segregating the metal element in the impurity region containing the noble gas element by a second heat treatment.

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