Semiconductor device including a superlattice with regions defining a semiconductor junction
First Claim
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1. A semiconductor device comprising:
- a superlattice comprising a plurality of stacked groups of layers;
each group of layers of said superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon;
said energy band-modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions; and
said superlattice comprising at least one pair of oppositely-doped regions therein defining at least one semiconductor junction.
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Abstract
A semiconductor device may include a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon. The energy band-modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The superlattice may further include at least one pair of oppositely-doped regions therein defining at least one semiconductor junction.
126 Citations
20 Claims
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1. A semiconductor device comprising:
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a superlattice comprising a plurality of stacked groups of layers; each group of layers of said superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon; said energy band-modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions; and said superlattice comprising at least one pair of oppositely-doped regions therein defining at least one semiconductor junction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a superlattice comprising a plurality of stacked groups of layers; each group of layers of said superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon; said energy band-modifying layer comprising at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions; and said superlattice comprising at least one pair of oppositely-doped regions therein in direct contact with one another and defining at least one semiconductor junction. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification