High-density inter-die interconnect structure

• US 7,045,835 B2
• Filed: 08/08/2003
• Issued: 05/16/2006
• Est. Priority Date: 09/10/2001
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: Agere Systems Incorporated (Broadcom, Inc.)
• Inventors: McMacken, John Russell, Layman, Paul Arthur
• Primary Examiner(s): Pham, Long
• Application Number:
  US10/638,248
• Publication Number:
  US 20040026771A1
• Time in Patent Office: 1,012 Days
• Field of Search: 257/252, 257/258, 257/291
• US Class Current: 257/258
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/1465 of the hybrid type
• CPC Class Codes: H01L 27/1469 Assemblies, i.e. hybrid integration
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01037 Rubidium [Rb]
• CPC Class Codes: H01L 2924/0105 Tin [Sn]
• CPC Class Codes: H01L 2924/01057 Lanthanum [La]
• CPC Class Codes: H01L 2924/01058 Cerium [Ce]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance

Abstract

An interconnect architecture for connecting a plurality of closely-spaced electrical elements on a first integrated circuit fabricated structure with operative circuits on a second integrated circuit fabricated structure. In one embodiment, the first integrated circuit fabricated structure comprises a plurality of photo sensors. Conductive interconnect elements on the first integrated circuit fabricated structure provide electrical connection between individual photo sensors and the operative circuitry on the second integrated circuit fabricated structure.

Claims

1. An image sensing and processing system, comprising:

a first integrated circuit comprising a plurality of image sensing elements responsive to electromagnetic radiation directed toward a first surface thereof and a plurality of first conductive interconnect elements disposed on a second surface thereof, wherein the plurality of image sensing elements further comprise elements selected responsive to the image sensing functionality of the first integrated circuit; and

a second integrated circuit comprising a plurality of image signal processing elements and a plurality of second conductive interconnect elements formed on a surface thereof and in electrical communication with the pluraliy of first conductive interconnect elements, wherein the plurality of image signal processing elements further comprise elements selected responsive to the image signal processing functionality of the second integrated circuit and wherein a pitch of the plurality of first interconnect elements is equal to a pitch of the plurality of second interconnect elements.

2. An image sensing and processing system, comprising:

a first integrated circuit comprising a plurality of image sensing elements responsive to electromagnetic radiation directed toward a first surface thereof and a plurality of first conductive interconnect elements disposed on a second surface thereof, wherein the plurality of image sensing elements further comprise elements selected responsive to the image sensing functionality of the first integrated circuit, and wherein the first integrated circuit comprises a semiconductor substrate of a first conductivity type and a plurality of spaced apart doped semiconductor regions of a second conductivity type formed in a surface of the semiconductor substrate, and wherein a reverse bias potential is applied to the semiconductor substrate and the doped regions to create a depletion region therebetween; and

a second integrated circuit comprising a plurality of image signal processing elements and a plurality of second conductive interconnect elements formed on a surface thereof and in electrical communication with the plurality of first conductive interconnect elements, wherein the plurality of image signal processing elements further comprise elements selected responsive to the image signal processing functionality of the second integrated circuit.