Microelectronic mechanical system and methods

• US 7,049,164 B2
• Filed: 10/09/2002
• Issued: 05/23/2006
• Est. Priority Date: 09/13/2001
• Status: Expired due to Term

• Current Assignee: Silicon Light Machines Corporation (SCREEN Holdings Co., Ltd.)
• Original Assignee: Silicon Light Machines Corporation (SCREEN Holdings Co., Ltd.)
• Inventors: Bruner, Mike
• Primary Examiner(s): Zarabian, Amir
• Assistant Examiner(s): Perkins, Pamela E
• Application Number:
  US10/268,257
• Publication Number:
  US 20030138986A1
• Time in Patent Office: 1,322 Days
• Field of Search: 438/735, 438/737, 438/738, 438/739, 438/740, 438/29, 438/32, 257/680, 216/2
• US Class Current: 438/32
• CPC Class Codes: B81B 2201/0271 Resonators; ultrasonic resonators
• CPC Class Codes: B81B 2203/0136 Comb structures
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 1/00333 Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
• CPC Class Codes: B81C 1/00484 Processes for releasing structures not provided for in group B81C1/00476
• CPC Class Codes: B81C 2201/0109 Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
• CPC Class Codes: B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
• CPC Class Codes: B81C 2203/0136 Growing or depositing of a covering layer
• CPC Class Codes: B81C 2203/0735 Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit

Abstract

The current invention provides for encapsulated release structures, intermediates thereof and methods for their fabrication. The multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate. A patterned device layer, preferably comprising silicon nitride, is embedded in a sacrificial material, preferably comprising polysilicon, and is disposed between the etch resistant substrate and the capping layer. Access trenches or holes are formed in to capping layer and the sacrificial material are selectively etched through the access trenches, such that portions of the device layer are release from sacrificial material. The etchant preferably comprises a noble gas fluoride NGF_2x (wherein Ng=Xe, Kr or Ar: and where x=1, 2 or 3). After etching that sacrificial material, the access trenches are sealed to encapsulate released portions the device layer between the etch resistant substrate and the capping layer. The current invention is particularly useful for fabricating MEMS devices, multiple cavity devices and devices with multiple release features.

Claims

1. A method of making a release structure from a multi-layer structure comprising first and second etch-stop layers, a first sacrificial layer between the first and the second etch-stop layers, a cap layer and a second sacrificial layer between the second etch-stop layer and the cap layer with at least one access trench, wherein the second etch-stop layer includes a release feature, the method comprising:

a. creating an access opening in the cap layer, the cap layer serving as a passivation layer;

b. etching portions of the first and the second sacrificial layers through the at least one access opening to form the release structure;

c. sealing the at least one access opening with a sealing material to form a predetermined environment comprising one of a plurality of noble gas environments and to package a device including the release structure.

2. The method of claim 1, further comprising the step of applying a pre-etch solution in the at least one access trench prior to the etching step.

3. The method of claim 1, wherein each of the first and second etch-stop layers are formed of a material selected from the group consisting of oxides, oxynitrides and nitrides of silicon.

4. The method of claim 1, wherein the first sacrificial layer and the second sacrificial layer comprise polysilicon.

5. The method of claim 4, wherein the first sacrificial layer and the second sacrificial layer independently have a thickness in a range of 0.1 to 3.0 microns thick.

6. The method of claim 1, wherein the multi-layer structure further comprises a silicon substrate.

7. The method of claim 6, wherein the first sacrificial layer, the second etch-stop layer, the second sacrificial layer and the cap layer are formed by sequential deposition on the silicon substrate.

8. The method of claim 1, wherein the access opening is formed by anisotropically etching the cap layer.

9. The method of claim 1, wherein etching portions of the first and second sacrificial layers is performed with an etchant comprising a noble gas fluoride.

10. The method of claim 1, wherein etching portions of the first and second sacrificial layers is performed with an etchant comprising xenon difluonde.

11. The method of claim 1, further comprising sealing the access opening with a sealing material.

12. The method of claim 11, wherein the sealing material comprises a material selected from the group consisting of polymers, metals and ceramics.

13. The method of claim 11, wherein the sealing material is aluminum metal.

14. the method of claim 1, wherein the release structure comprises a microelectronic mechanical structure (MEMS).

15. A method of making a MEMS device comprising:

a. forming a first sacrificial layer on a substrate;

b. forming a MEM feature comprising an etch resistant material over the first sacrificial layer, the MEM feature having at least one gap therein;

c. forming a second sacrificial layer on the MEM feature;

d. forming a capping layer over the second sacrificial layer, the capping layer serving as a passivation layer;

e. providing at least one access opening through the capping layer exposing a portion of the first sacrificial layer therebelow;

f. etching the first and the second sacrificial layers through the at least one access trench to release a portion of the MEM feature from the first and the second sacrificial layers; and

g. sealing the at least one access opening with a sealing material to form a predetermined environment comprising one of a plurality of noble gas environments and to package the MEMS device.

16. The method of claim 15, further comprising forming a bottom etch-stop layer on a process wafer prior to forming a first sacrificial layer.

17. The method of claim 15, wherein the etching is accomplished with an etchant comprising a noble gas fluoride.

18. the method of claim 15, wherein the etching is accomplished with an etchant comprising xenon difluoride.

19. The method of claim 15, further comprising sealing the at least one access opening with a sealing material.

20. The method of claim 19, wherein the sealing material is selected from the group consisting of metals, polymers and ceramics.