Method of manufacturing an external force detection sensor

• US 7,049,165 B2
• Filed: 12/02/2003
• Issued: 05/23/2006
• Est. Priority Date: 04/19/1999
• Status: Expired due to Term

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Oguchi, Takahiro
• Primary Examiner(s): Fourson, George
• Assistant Examiner(s): GARCIA, JOANNIE A
• Application Number:
  US10/725,874
• Publication Number:
  US 20040110318A1
• Time in Patent Office: 903 Days
• Field of Search: 438/53, 438/456, 438/700, 438/740, 438/970, 438/459, 438/977, 438/FOR.105, 438/FOR.131, 438/FOR.432, 438/FOR.438, 438/FOR.485, 438/52, 148/DIG.135, 148/DIG.159, 148/DIG.12
• US Class Current: 438/52
• CPC Class Codes: B81B 2201/025 Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
• CPC Class Codes: B81C 1/00579 Avoid charge built-up
• CPC Class Codes: B81C 1/00587 Processes for avoiding or controlling over-etching not provided for in B81C1/00571 - B81C1/00579
• CPC Class Codes: B81C 2201/0132 Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
• CPC Class Codes: B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: Y10S 148/012 Bonding, e.g. electrostatic for strain gauges
• CPC Class Codes: Y10S 148/135 Removal of substrate
• CPC Class Codes: Y10S 148/159 Strain gauges

Abstract

A method of manufacturing an external force detection sensor in which a sensor element is formed by through-hole dry etching of an element substrate, and an electrically conductive material is used as an etching stop layer during the dry etching.

Claims

1. A method of manufacturing an external force detection sensor, comprising interposing an etching stop layer comprised of an electrically conductive material between an element substrate and a dummy support substrate to support the element substrate through-hole dry etching of the element substrate to form a sensor element;

wherein the dummy support substrate and the etching stop layer are removed after the sensor element is formed and, after that, a support substrate with a recessed part formed therein is arranged on a back surface side of said element substrate such that the recessed part of said support substrate is arranged opposite to the sensor element and, then the support substrate is joined with the element substrate.

2. A method of manufacturing an external force detection sensor according to claim 1, wherein the element substrate is formed of a silicon material, the support substrate is formed of a glass material, and the element substrate is anodically joined with the support substrate.

3. A method of manufacturing an external force detection sensor according to claim 1,

wherein the etching stop layer is formed of an electrically conductive material whose etch selectivity which is the ratio of the dry-etch rate of an element substrate to the dry-etch rate of an etching stop layer is not less than 1.

4. A method of manufacturing an external force detection sensor according to claim 1, wherein the sensor element is a movable element.

5. A method of manufacturing an external force detection sensor according to claim 3, wherein the etching stop layer is made of titanium or aluminum.