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Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device

  • US 7,049,190 B2
  • Filed: 03/17/2003
  • Issued: 05/23/2006
  • Est. Priority Date: 03/15/2002
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating a semiconductor device, comprising the steps of:

  • using a non-doped ZnO target and forming a first ZnO film on a substrate by sputtering with a sputtering gas containing oxygen and also forming a second ZnO film on the first ZnO film by sputtering with the flow rate ratio of the oxygen gas in the sputtering gas being decreased continuously;

    forming a groove dividing the second ZnO film;

    providing a gate electrode over the groove via an insulating layer; and

    providing, on the second ZnO film, a source electrode and a drain electrode facing each other with the groove therebetween.

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