Method for forming a low thermal budget spacer
First Claim
1. A method of forming a sidewall spacer on a gate electrode of a metal oxide semiconductor device comprising:
- forming a first plasma to form an oxide layer on a side of the gate electrode, wherein the first plasma is generated from a oxide gas comprising O3 and an amino silane; and
forming a second plasma to form a carbon-doped nitride layer on the oxide layer, wherein the second plasma is generated from a nitride gas comprising NH3 and an amino silane, wherein the first and second plasmas are formed using plasma CVD, wherein the amino silane flows uninterrupted between the forming of the first plasma and the forming of the second plasma.
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Abstract
A method of forming a sidewall spacer on a gate electrode of a metal oxide semiconductor device that includes striking a first plasma to form an oxide layer on a side of the gate electrode, where the first plasma is generated from a oxide gas that includes O3 and bis-(tertiarybutylamine)silane, and striking a second plasma to form a carbon-doped nitride layer on the oxide layer, where the second plasma may be generated from a nitride gas that includes NH3 and the bis-(tertiarybutylamine)silane. The first and second plasmas may be formed using plasma CVD and the bis-(tertiarybutylamine)silane flows uninterrupted between the striking of the first plasma and the striking of the second plasma.
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Citations
20 Claims
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1. A method of forming a sidewall spacer on a gate electrode of a metal oxide semiconductor device comprising:
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forming a first plasma to form an oxide layer on a side of the gate electrode, wherein the first plasma is generated from a oxide gas comprising O3 and an amino silane; and forming a second plasma to form a carbon-doped nitride layer on the oxide layer, wherein the second plasma is generated from a nitride gas comprising NH3 and an amino silane, wherein the first and second plasmas are formed using plasma CVD, wherein the amino silane flows uninterrupted between the forming of the first plasma and the forming of the second plasma. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a metal-oxide semiconductor device, the method comprising:
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forming a gate oxide and a gate electrode over a semiconductor substrate; forming a halo section in the substrate; and forming a first sidewall spacer along a first side of the gate electrode and over the halo section, and a second sidewall spacer along a second side of the gate electrode opposite the first side, wherein the first and the second sidewall spacers comprise an oxide layer contacting the gate electrode and a carbon-doped nitride layer contacting the oxide layer, and wherein both the oxide layer and the nitride layer are formed by way of plasma CVD using a silicon source comprising bis-(tertiarybutylamine)silane, wherein the bis-(tertiarybutylamine)silane flows uninterrupted between the formation of the oxide layer and the nitride layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A method of forming a field effect transistor in a low thermal budget process, the method comprising:
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forming a gate electrode over a semiconductor substrate; forming a halo section comprising a boron dopant in the substrate; and forming a first sidewall spacer along a first side of the gate electrode and over the halo section, and a second sidewall spacer along a second side of the gate electrode opposite the first side, wherein the first and the second sidewall spacers comprise an oxide layer contacting the gate electrode and a carbon-doped nitride layer contacting the oxide layer, and wherein both the oxide layer and the nitride layer are formed by way of plasma CVD operating at a temperature from about 250°
C. to about 400°
C. and using a silicon source comprising bis-(tertiarybutylamine)silane, wherein the bis-(tertiarybutylamine)silane flows uninterrupted between the formation of the oxide layer and the nitride layer.
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Specification