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Method for forming a low thermal budget spacer

  • US 7,049,200 B2
  • Filed: 05/25/2004
  • Issued: 05/23/2006
  • Est. Priority Date: 05/25/2004
  • Status: Expired due to Fees
First Claim
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1. A method of forming a sidewall spacer on a gate electrode of a metal oxide semiconductor device comprising:

  • forming a first plasma to form an oxide layer on a side of the gate electrode, wherein the first plasma is generated from a oxide gas comprising O3 and an amino silane; and

    forming a second plasma to form a carbon-doped nitride layer on the oxide layer, wherein the second plasma is generated from a nitride gas comprising NH3 and an amino silane, wherein the first and second plasmas are formed using plasma CVD, wherein the amino silane flows uninterrupted between the forming of the first plasma and the forming of the second plasma.

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