Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

• US 7,049,247 B2
• Filed: 05/03/2004
• Issued: 05/23/2006
• Est. Priority Date: 05/03/2004
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Nguyen, Son Van, Patel, Vishnubhai V., Wang, Xinhui, Gates, Stephen M., Grill, Alfred, Medeiros, David R., Neumayer, Deborah
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Berry, Renee R.
• Application Number:
  US10/838,849
• Publication Number:
  US 20050245096A1
• Time in Patent Office: 750 Days
• Field of Search: 438/758, 438/778, 438/780, 438/782
• US Class Current: 438/778
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/02348 treatment by exposure to UV light
• CPC Class Codes: H01L 21/02351 treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/31695 Deposition of porous oxides or porous glassy oxides or oxide based porous glass

Abstract

A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

Claims

1. A method for fabricating an ultralow dielectric constant film comprising the steps of:

flowing a first precursor gas having a linear molecular formula of SiRR′

R″

R′

″

, where R,R′

,R″

, and R′

″

are the same or different and are selected from H, alkyl, and alkoxy into a chamber of a plasma enhanced chemical vapor deposition (PECVD) reactor;

flowing a second precursor gas having one of the following formulas

where R¹, R², R³, R⁴, R⁵ and R⁶ may or may not be identical and are selected from hydrogen, alkyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents into said chamber; and

depositing an ultralow k film from said precursor gases on a substrate.

2. The method of claim 1 wherein said ultralow k film is a multiphase film that comprises a first phase consisting essentially of Si, C, O and H and at least a second phase consisting essentially of C, H and a multiplicity of nanometer-sized pores on said substrate.

3. The method of claim 1 further comprising mixing an inert gas with one or both of said precursor gases.

4. The method of claim 1 further comprising heating said ultralow k film after deposition at a temperature not less than about 300°

C. for at least about 0.25 hours.

5. The method of claim 1 further comprising treating said utralow k film after deposition with an energy source to stabilize the ultralow k film and improve its properties, said energy source comprising one of a thermal source, a chemical source, an ultraviolet (UV) light source, an electron beam (e-beam) source, a microwave source, or a plasma source.

6. The method of claim 1 wherein said ultralow k film has a dielectric constant of not more than about 2.5.

7. The method of claim 1 wherein said ultralow k film has a dielectric constant from about 1.5 to 2.5.

8. The method of claim 1 wherein said ultralow k film comprises about 5 to about 40 atomic percent of Si;

about 5 to about 45 atomic percent of C;

about 0 to about 50 atomic percent of O; and

about 10 to about 55 atomic percent of H.

9. The method of claim 1 wherein said PECVD reactor has an area of a substrate chuck between about 300 cm² and about 800 cm^2, and a gap between the substrate and a top electrode between about 1 cm and about 10 cm.

10. The method of claim 1 further comprising the step of applying a RF power to an electrode of said PECVD reactor.

11. The method of claim 1 further comprising a step of UV or e-beam treating said ultralow k film at a temperature not lower than about 300°

C for up to 30 minutes.

12. The method of claim 1 further comprising a step of a combination of heat treating and UV or e-beam treating said ultralow k film.

13. The method of claim 1 wherein said first precursor gas is diethoxymethylsilane (DEMS).

14. The method of claim 1 wherein said second precursor comprises bicycloheptadiene (BCHD), cyclopentene oxide (CPO), ethylene oxide, propylene oxide, isobutylene oxide, 2,2,3-trimethyloxirane, butadienemonoxide, 1,2-epoxy-5-hexene, 2-methyl-2-vinyloxirane, tertbutylmethylether, 1-isopropyl-cycloohexa-1,3-diene or mixtures thereof.

15. The method of claim 1 wherein said step of depositing the ultralow k film further comprises the steps of setting a temperature for said substrate at between about 25°

C. and about 400°

C.; and

setting a RF power density at between about 0.05 W/cm² and about 3.5 W/cm².

16. The method of claim 1 wherein said step of depositing the ultralow k film further comprises setting a flow rate for said first precursor gas between about 5 sccm to about 1000 sccm, or between about 30 to about 6,000 mg/minute when liquid delivery is used.

17. The method of claim 16 wherein said flow rate for said first precursor gas is between about 25 sccm to about 200 sccm, or between about 150 to about 1200 mg/minute when liquid delivery is used.

18. The method of claim 1 wherein said step of depositing said ultralow k film further comprises setting a flow rate for said second precursor gas between about 5 sccm to about 1000 sccm, or between about 30 to about 6,000 mg/minute when liquid delivery is used.

19. The method of claim 18 wherein said flow rate for said second precursor gas is between about 25 sccm to about 200 sccm, or between about 150 to about 1200 mg/minute when liquid delivery is used.

20. The method of claim 1 wherein said step of depositing said ultralow k film further comprises setting a pressure for said PECVD reactor at between about 50 mtorr and about 10000 mtorr.

21. The method of claim 20 wherein said pressure for said PECVD reactor is between about 100 mtorr and about 5000 mtorr.

22. The method of claim 1 wherein said step of depositing said ultralow k film further comprises setting a flow rate ratio of bicycloheptadiene, as said second precursor gas, to diethoxymethylsilane, as said first precursor gas, to between about 0.1 and about 3.

23. The method of claim 22 wherein said flow rate ratio of said bicycloheptadiene to said diethoxymethylsilane is between about 0.2 and about 0.6.

24. The method of claim 1 wherein said PECVD reactor is run in a continuous mode.

25. The method of claim 1 wherein said PECVD reactor is run in a pulsed mode.

26. A method for fabricating a thermally stable ultralow k film comprising the steps of:

providing a plasma enhanced chemical vapor deposition (PECVD) reactor;

positioning a pre-processed wafer on a substrate chuck having an area between about 300 cm² and about 800 cm² and maintaining a gap between said wafer and a top electrode between about 1 cm and about 10 cm;

flowing a first precursor gas comprising linear silane derivative molecules into said PECVD reactor;

flowing at least a second precursor gas comprising a compound having one of the following formulas

where R¹, R², R³, R⁴, R⁵ and R⁶ may or may not be identical and are selected from hydrogen, alkyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents into said PECVD reactor, and

depositing an ultralow k film on said wafer.

27. A method for fabricating a thermally stable ultralow k film comprising the steps of:

providing a plasma enhanced chemical vapor deposition (PECVD) reactor;

positioning a wafer on a substrate chuck having an area between about 300 cm² and about 800 cm², and maintaining a gap between the wafer and a top electrode between about 1 cm and about 10 cm;

flowing into said reactor over said wafer kept at a temperature between about 25°

C. and about 400°

C., a first precursor gas of a linear silane derivative at a flow rate between about 5 sccm and about 1000 sccm, and a second precursor gas at a flow rate between about 5 sccm and about 1000 sccm, while keeping a pressure in said reactor between about 50 mtorr and about 8000 mtorr, said second precursor gas comprising a compound having one of the following formulas

where R¹, R², R³, R⁴, R⁵ and R⁶ may or may not be identical and are selected from hydrogen, alkyl, alkenyl or alkynyl groups that may be linear, branched, cyclic, polycyclic and may be functionalized with oxygen, nitrogen or fluorine containing substituents;

depositing an ultralow k film on said wafer under a RF power density between about 0.05 W/cm² and about 3.0 W/cm²; and

treating said ultralow k film to improve the stability of said film, said treating comprises an energy source selected from thermal, chemical, ultraviolet (UV) light, electron beam (e-beam), microwave, plasma and a combination thereof.

28. The method of claim 27 wherein said treating comprises annealing at a temperature not less than about 300°

C. for at least about 0.25 hours.