Opposed terminal structure having a nitride semiconductor element

• US 7,049,635 B2
• Filed: 04/27/2005
• Issued: 05/23/2006
• Est. Priority Date: 01/28/2002
• Status: Expired due to Term

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Yamamoto, Masashi, Sano, Masahiko, Nonaka, Mitsuhiro, Kamada, Kazumi
• Primary Examiner(s): Prenty, Mark V.
• Application Number:
  US11/115,247
• Publication Number:
  US 20050211993A1
• Time in Patent Office: 391 Days
• Field of Search: 257/79, 257/14, 257/94, 257/96, 257/98, 257/99, 257/101, 257/103
• US Class Current: 257/79
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01S 2304/12 Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes

Abstract

An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.

Claims

1. An opposed terminal structure comprising:

a supporting substrate;

a conductive layer formed on or over the supporting substrate;

a first terminal formed at least partially on or over the conductive layer;

a first protect layer formed at least partially on or over the conductive layer other than the portion where the first terminal is formed;

a nitride semiconductor with a light-emitting layer, the nitride semiconductor formed on or over the first terminal and the conductive layer, the nitride semiconductor having a first surface facing to the first terminal; and

wherein at least a first portion of an interface between the first surface of the nitride semiconductor and the first terminal, and at least a second portion of an interface between the first protect layer and the conductive layer forms asperity portions.

2. The opposed terminal structure according to claim 1, wherein the first protect layer and the nitride semiconductor has optical connection transmittable of the light.

3. The opposed terminal structure according to claim 2, further comprising an interposition layer interposed between the first protect layer and the nitride semiconductor.

4. The opposed terminal structure according to claim 1, wherein the first protect layer is a light-transmitting layer transmittable of the light emitted from the light-emitting layer.

5. The opposed terminal structure according to claim 1, wherein the first protect layer has a region extending from the interface between the first protect layer and the nitride semiconductor in a traverse direction of the nitride semiconductor, in which the protect layer is not electrically in contact with the nitride semiconductor, extended to the outside of the nitride semiconductor.

6. The opposed terminal structure according to claim 1, wherein the first protect layer includes a metal layer including at least one element selected from the group consisting of Al, Ag, and Rh, the metal layer being formed on the side of the first protect layer not in contact with the nitride semiconductor.