Device including OLED controlled by n-type transistor

• US 7,049,636 B2
• Filed: 10/28/2002
• Issued: 05/23/2006
• Est. Priority Date: 10/28/2002
• Status: Expired due to Term

• Current Assignee: Universal Display Corporation
• Original Assignee: Universal Display Corporation
• Inventors: Weaver, Michael S., Hack, Michael, Lu, Min-Hao Michael
• Primary Examiner(s): Pham, Hoai
• Assistant Examiner(s): Farahani, Dana
• Application Number:
  US10/281,218
• Publication Number:
  US 20040079945A1
• Time in Patent Office: 1,303 Days
• Field of Search: 257/461, 257/460, 257/459, 257/458, 257/462, 257/463, 257/464, 257/465, 257/466, 257/452, 257/79, 257/99, 257/100, 257/98, 257/103, 257/83, 349/42, 313/489, 313/106, 313/104, 313/491, 313/500, 313/504, 345/45, 345/47, 438/22, 438/29, 438/30
• US Class Current: 257/83
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/828 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/80524 Transparent cathodes, e.g. comprising thin metal layers

Abstract

A device and corresponding method are provided. The device includes an n-type transistor fabricated over a substrate, the n-type transistor having a gate and two current-carrying electrodes. The device also includes a non-inverted organic light emitting device fabricated over the substrate, the non-inverted organic light emitting device having an anode and a cathode. The cathode is connected to one of the current-carrying electrodes of the n-type transistor.

Claims

1. A device, comprising:

an n-type transistor fabricated over a substrate, the n-type transistor having a gate and two current-carrying electrodes; and

a non-inverted organic light emitting device fabricated over the substrate, the non-inverted organic light emitting device having an anode and a cathode, the cathode being connected to one of the current-carrying electrodes of the n-type transistor, wherein the cathode of the organic light emitting device is connected directly to one of the current-carrying electrodes of the n-type transistor.

2. The device of claim 1, wherein the n-type transistor is an n-type thin film transistor.

3. The device of claim 1, further comprising an integrated shadow mask over the substrate.

4. The device of claim 1, wherein the n-type transistor is a driving n-type transistor.

5. The device of claim 1, wherein the current-carrying electrode to which the cathode is connected functions as a drain.

6. The device of claim 1, wherein a current through the organic light emitting device and the n-type transistor is substantially independent of a current-voltage characteristic of the organic light emitting device.

7. The device of claim 1, wherein the n-type transistor is one of:

a) a polycrystalline silicon thin film transistor;

b) an amorphous thin film transistor;

c) a cadmium selenide thin film transistor;

or d) an organic thin film transistor.

8. The device of claim 1, wherein the organic light emitting device is phosphorescent.

9. The device of claim 1, wherein the device is flexible.

10. The device of claim 9, wherein the substrate includes a material selected from the group consisting of metal foil or plastic.

11. The device of claim 1, wherein the cathode is substantially transparent.

12. The device of claim 1, wherein the electronic device is top-emitting.

13. The device of claim 1, wherein a data voltage required to turn on the n-type transistor is less than about 10 volts.

14. The device of claim 1, further comprising an encapsulation layer formed over the organic light emitting device.

15. The device of claim 1, wherein a data voltage required to turn on the n-type transistor does not include a voltage across the organic light emitting diode.

16. A lighting device, comprising the device of claim 1.

17. A display device, comprising the device of claim 1.

18. A method of forming a device, comprising:

fabricating an n-type transistor over a substrate, the n-type transistor having a gate and two current-carrying electrodes; and

fabricating a non-inverted organic light emitting device over the substrate, the non-inverted organic light emitting device having an anode and a cathode, the cathode being connected to one of the current-carrying electrodes of the n-type transistor, wherein the cathode of the organic light emitting device is connected directly to one of the current-carrying electrodes of the n-type transistor.

19. The method of claim 18, wherein the n-type transistor is an n-type thin film transistor.

20. The method of claim 18, further comprising fabricating the non-inverted organic light emitting device with an integrated shadow mask.

21. The method of claim 18, wherein the n-type transistor is a driving n-type thin film transistor.

22. The method of claim 18, wherein a current through the organic light emitting device and the n-type transistor is substantially independent of a current-voltage characteristic of the organic light emitting device.

23. The method of claim 18, wherein the current-carrying electrodes to which the cathode is connected functions as a drain.

24. The method of claim 18, wherein the n-type transistor is one of:

a) a polycrystalline silicon thin film transistor;

b) an amorphous thin film transistor;

c) a cadmium selenide thin film transistor;

or d) an organic thin film transistor.

25. The method of claim 18, wherein the organic light emitting device is phosphorescent.

26. The method of claim 18, wherein the device is flexible.

27. The method of claim 26, wherein the substrate includes a material selected from the group consisting of a metal foil or plastic.

28. The method of claim 18, wherein the cathode is substantially transparent.

29. The method of claim 18, further comprising forming the device as a top-emitting device.

30. The method of claim 18, wherein a data voltage required to turn on the n-type transistor is less than about 10 volts.

31. The method of claim 18, further comprising forming an encapsulation layer over the organic light emitting device.

32. The method of claim 18, wherein a data voltage required to turn on the n-type transistor does not include a voltage across the organic light emitting diode.

33. A method of forming a lighting device, comprising forming the device of claim 18.

34. A method of forming a display device, comprising forming the device of claim 18.