Diverse band gap energy level semiconductor device
First Claim
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1. A semiconductor structure comprising:
- a first semiconductor having a first band gap energy level;
a second semiconductor in electrical communication with the first semiconductor and having a second band gap energy level, wherein the second band gap energy level is different from the first band gap energy level;
a wordline input in electrical communication with the first semiconductor; and
a bitline output in electrical communication with the second semiconductor.
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Abstract
Hetero-structure semiconductor devices having first and second-type semiconductor junctions are disclosed. The hetero-structures are incorporated into pillar and rail-stack memory circuits improving the forward-to-reverse current ratios thereof.
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3 Claims
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1. A semiconductor structure comprising:
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a first semiconductor having a first band gap energy level; a second semiconductor in electrical communication with the first semiconductor and having a second band gap energy level, wherein the second band gap energy level is different from the first band gap energy level; a wordline input in electrical communication with the first semiconductor; and a bitline output in electrical communication with the second semiconductor. - View Dependent Claims (2, 3)
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Specification