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Diverse band gap energy level semiconductor device

  • US 7,049,678 B2
  • Filed: 09/25/2002
  • Issued: 05/23/2006
  • Est. Priority Date: 02/15/2002
  • Status: Expired due to Term
First Claim
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1. A semiconductor structure comprising:

  • a first semiconductor having a first band gap energy level;

    a second semiconductor in electrical communication with the first semiconductor and having a second band gap energy level, wherein the second band gap energy level is different from the first band gap energy level;

    a wordline input in electrical communication with the first semiconductor; and

    a bitline output in electrical communication with the second semiconductor.

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