Light emitting diodes with improved light extraction efficiency

• US 7,053,419 B1
• Filed: 09/12/2000
• Issued: 05/30/2006
• Est. Priority Date: 09/12/2000
• Status: Expired due to Term

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Lumileds Lighting US LLC (Apollo Global Management, Inc.)
• Inventors: Krames, Michael R., Mueller-Mach, Regina B., Mueller, Gerd O., Steranka, Frank M., Camras, Michael D., Taber, Robert C., Trottier, Troy A., Uebbing, John J., Lowery, Christopher H., Snyder, Wayne L., Pocius, Douglas W.
• Primary Examiner(s): Wilczewski, Mary
• Assistant Examiner(s): Lewis, Monica
• Application Number:
  US09/660,317
• Time in Patent Office: 2,086 Days
• Field of Search: 257/98
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent lens having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent lens to a light emitting device having a stack of layers including semiconductor layers comprising an active region includes elevating a temperature of the lens and the stack and applying a pressure to press the lens and the stack together. Bonding a high refractive index lens to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection. Advantageously, this improvement can be achieved without the use of an encapsulant.

Claims

1. A light emitting device comprising:

a stack of layers including semiconductor layers comprising an active region;

a transparent lens attached to said stack by a bond affected at an interface disposed between said lens and said stack; and

a transparent bonding layer disposed between said lens and a surface of said stack, said transparent bonding layer bonding said lens to said stack, said transparent bonding layer comprising an inorganic material.

2. The light emitting device of claim 1, wherein said transparent bonding layer is formed from a material selected from the group of optical glass, chalcogenidc glass, III-V semiconductors, II-VI semiconductors, group IV semiconductors, metals, metal oxides, metal fluorides, yttrium aluminum garnet, phosphides, arsenides, antimonides, nitrides, and combinations thereof.

3. The light emitting device of claim 1, wherein said transparent bonding layer includes one or more luminescent materials that convert light of a wavelength emitted by said active region to at least another wavelength.

4. The light emitting device of claim 1, wherein said bonding layer has a thickness less than about 500 Angstroms.

5. The light emitting device of claim 1, wherein said surface includes a surface of one of said semiconductor layers.

6. The light emitting device of claim 1, wherein said bonding layer has an index of refraction greater than about 1.5 for light emitted by said active region.

7. The light emitting device of claim 1, wherein said surface includes a surface of a transparent layer disposed above said semiconductor layers.

8. The light emitting device of claim 7, wherein said superstrate layer has a refractive index of light emitted by said active region greater than about 1.8.

9. The light emitting device of claim 7, wherein said superstrate layer is formed from a material selected from the group of sapphire, SiC, GaN, and GaP.

10. The light emitting device of claim 7, wherein said lens is formed from a material selected from the group of zirconium oxide, sapphire, materials containing lead oxide, materials containing tungsten oxide, SiC, and ZnS, said superstrate is formed from a material selected from the group of SiC, GaN, and sapphire, and said semiconductor layers comprise III-Nitride semiconductors.

11. The light emitting device of claim 7, wherein said lens is formed from a material selected from the group of zirconium oxide, sapphire, materials containing lead oxide, materials containing tungsten oxide, SiC, ZnS, and GaP, said superstrate is formed from a III-Phosphide material, and said semiconductor layers comprise a material selected from the group of III-Phosphide semiconductors and III-Arsenide semiconductors.

12. The light emitting device of claim 1, wherein said lens is formed from a material selected from the group of zirconium oxide, sapphire, GaP, ZnS, materials containing lead oxide, materials containing tungsten oxide, and SiC.

13. The light emitting device of claim 1, wherein said transparent bonding layer includes a lead oxide.

14. The light emitting device of claim 1, wherein said transparent bonding layer includes a tungsten oxide.