Solid-state image pickup device with discharge gate operable in an arbitrary timing

• US 7,053,948 B2
• Filed: 02/05/2001
• Issued: 05/30/2006
• Est. Priority Date: 03/22/2000
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Konishi, Tomohiro
• Primary Examiner(s): Ometz, David
• Assistant Examiner(s): SELBY, GEVELL V
• Application Number:
  US09/777,314
• Publication Number:
  US 20010023919A1
• Time in Patent Office: 1,940 Days
• Field of Search: 348/311, 348/249, 348/250, 348/282, 348/294, 348/298, 348/314
• US Class Current: 348/311
• CPC Class Codes: H01L 27/14843 Interline transfer
• CPC Class Codes: H04N 25/445 by skipping some contiguous pixels within the read portion of the array
• CPC Class Codes: H04N 25/73 using interline transfer [IT]

Abstract

A solid-state image pickup device has a discharge gate and a discharge drain provided adjacent to a connection of a vertical CCD and a horizontal CCD so that charges accumulated for an arbitrary pixel can be completely depleted. Data can be read at an arbitrary decimation rate only by changing a drive condition of the discharge gate. An arbitrary decimation rate can be achieved and a frame rate, resolution or the like can easily changed while vertical transfer electrodes can keep the same wiring structure as in a still mode (normal reading) without making a complicated wiring structure of vertical transfer electrodes such as the prior art. Therefore, this solid-state image pickup device can achieve an arbitrary decimation rate and easily change a frame rate, resolution or the like only by changing drive conditions without making a complicated wiring structure of vertical transfer electrodes.

Claims

1. A solid-state image pickup device comprising a plurality of light receiving sections formed on a semiconductor substrate, at least one vertical transfer section for transferring charges read from the light receiving sections in a vertical direction and a horizontal transfer section for transferring charges transferred by the vertical transfer section in a horizontal direction, wherein

said solid-state image pickup device is provided with a charge discharge gate which is formed adjacent to a connection of each vertical transfer section and the horizontal transfer section and depletes charges in each vertical transfer section and a charge discharge drain formed adjacent to each charge discharge gate, and

signal charges in the vertical transfer section are discharged from each charge discharge gate to each charge discharge drain by simultaneously applying voltages having high-low voltage ratios corresponding to decimation ratios to the charge discharge gates for performing an arbitrary decimation.

2. The solid-state image pickup device according to claim 1, wherein

a layer directly under the gate having the same conductive type as that of the vertical transfer section is formed under the discharge gate positioned between the vertical transfer section and the discharge drain.

3. The solid-state image pickup device according to claim 1, wherein

a layer directly under the gate having the same conductive type as that of the vertical transfer section is formed under the discharge gate positioned between the vertical transfer section and the discharge drain in the same process of forming the vertical transfer section.

4. The solid-state image pickup device according to claim 1, wherein

the discharge gate covers at least part of the vertical transfer section.

5. The solid-state image pickup device according to claim 1, wherein

a voltage applied to the discharge drain is made variable and a drive timing of a voltage applied to the discharge drain is synchronized with a drive timing of a voltage applied to the discharge gate.

6. The solid-state image pickup device according to claim 5, wherein

a pulse width applied to the discharge drain covers at least a pulse applied to the discharge gate in a discharge operation mode where the discharge drain is driven while synchronized with driving of the discharge gate.

7. The solid-state image pickup device according to claim 1, wherein

one discharge drain is provided between the neighboring vertical transfer sections and signal charges in the two vertical transfer sections positioned on both sides of the discharge drain are discharged to this one discharge drain via the discharge gate provided adjacent to the vertical transfer sections.

8. The solid-state image pickup device according to claim 1, wherein

the vertical transfer section provided with the discharge drain and the vertical transfer section not provided with the discharge drain are arbitrarily set and the combinations of the set discharge drains are arranged on a plurality of stages in the vertical direction.

9. The solid-state image pickup device according to claim 1, wherein each charge discharge gate and each charge discharge drain are formed adjacent to each connection of the vertical transfer section and the horizontal transfer section.