Coupled ferromagnetic systems having modified interfaces
First Claim
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1. A coupled ferromagnetic structure comprising:
- an amorphous layer;
a first ferromagnetic layer directly on the amorphous layer;
a spacer layer on a first surface of the first ferromagnetic layer; and
a second ferromagnetic layer on the spacer layer, interlayer exchange coupling occurring between the first and second ferromagnetic layers;
morphology of the first surface modified to tailor the interlayer exchange coupling;
the interlayer exchange coupling being one of ferromagnetic and antiferromagnetic.
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Abstract
A coupled ferromagnetic structure includes a first ferromagnetic layer, a spacer layer on a first surface of the first ferromagnetic layer, and a second ferromagnetic layer on the spacer layer. Interlayer exchange coupling occurs between the first and second ferromagnetic layers. The coupling may be ferromagnetic or antiferromagnetic. Morphology of the first surface is modified to tailor the interlayer exchange coupling. The structure may form a part of a magnetoresistive device such as a magnetic tunnel junction.
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Citations
25 Claims
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1. A coupled ferromagnetic structure comprising:
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an amorphous layer; a first ferromagnetic layer directly on the amorphous layer; a spacer layer on a first surface of the first ferromagnetic layer; and a second ferromagnetic layer on the spacer layer, interlayer exchange coupling occurring between the first and second ferromagnetic layers; morphology of the first surface modified to tailor the interlayer exchange coupling; the interlayer exchange coupling being one of ferromagnetic and antiferromagnetic. - View Dependent Claims (2)
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3. A coupled ferromagnetic structure comprising:
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a first ferromagnetic layer; a spacer layer on a first surface of the first ferromagnetic layer; and a second ferromagnetic layer on the spacer layer, interlayer exchange coupling occurring between the first and second ferromagnetic layers; wherein the morphology of the first surface is modified to increase the interlayer exchange coupling, the interlayer exchange coupling being one of ferromagnetic and antiferromagnetic. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A magnetoresistive device comprising:
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a free ferromagnetic layer; a first spacer layer on the free ferromagnetic layer, the first spacer layer made of an amorphous material; and a coupled ferromagnetic structure on the spacer layer, the structure including a first ferromagnetic layer on the first spacer layer;
a second spacer layer on the first ferromagnetic layer, and a second ferromagnetic layer on the second spacer layer, interlayer exchange coupling between the first and second ferromagnetic layers being antiferromagnetic, the first ferromagnetic layer and the second spacer layer forming an interface, morphology of the interface having been modified to increase the interlayer exchange coupling. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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- 24. A method of forming a coupled ferromagnetic structure including a first ferromagnetic layer, a spacer layer on a first surface of the first ferromagnetic layer, a second ferromagnetic layer on the spacer layer, one of ferromagnetic and antiferromagnetic coupling occurring between the first and second ferromagnetic layers, the method comprising flattening the first surface by ion etching to tailor the coupling.
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