Datapath architecture for high area efficiency
First Claim
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1. Dynamic Random Access, DRAM, data path circuitry comprising:
- an array of memory cells,a bit line attached to each of said memory cells,a word line attached to each of said memory cells,a bit line sense amplifier connected to each of said bit lines,a bit switch which connects the output of bit line sense amplifiers to a local data line,a local data line switch which connects multiple local data lines to a main data line,a main data line sense amplifier connected to said main data lines, anda main data line switch connected to each of said main data line sense amplifiers, wherein a memory data input bus and data output bus are multiplexed onto a single data bus in order to save semiconductor area, wherein a high address bit of a word line row address is used to select a particular main data sense amplifier by means of a control switch.
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Abstract
A particular DRAM data path architecture is disclosed. In accordance with this invention, the sharing of MDQ sense amplifiers simplifies the circuit design of the memory sub array. Fewer MDQ sense amplifiers and fewer unique MDQ lines leads to a reduced chip layout area. The high address bit of the word line row address (RA) is used to select a particular main data sense amp by means of a control switch. Not only are the sense amplifiers multiplexed for the new sub array, but the data I/O are multiplexed as well, leading to a significant reduction in the number of circuits required.
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Citations
26 Claims
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1. Dynamic Random Access, DRAM, data path circuitry comprising:
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an array of memory cells, a bit line attached to each of said memory cells, a word line attached to each of said memory cells, a bit line sense amplifier connected to each of said bit lines, a bit switch which connects the output of bit line sense amplifiers to a local data line, a local data line switch which connects multiple local data lines to a main data line, a main data line sense amplifier connected to said main data lines, and a main data line switch connected to each of said main data line sense amplifiers, wherein a memory data input bus and data output bus are multiplexed onto a single data bus in order to save semiconductor area, wherein a high address bit of a word line row address is used to select a particular main data sense amplifier by means of a control switch. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of designing a DRAM data path in order to reduce the circuit density comprising the steps of:
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including an array of memory cells, attaching bit lines to each of said memory cells, attaching word lines to each of said memory cells, connecting bit line sense amplifiers to each of said bit lines, connecting bit switches from the output of bit line sense amplifiers to a local data line, connecting local data line switches from multiple local data lines to a main data line, connecting a main data line sense amplifier to said main data lines, and connecting main data line switches to each of said main data line sense amplifiers, wherein a memory data input bus and data output bus are multiplexed onto a single data bus in order to save semiconductor area, wherein a high address bit of a word line row address is used to select a particular main data sense amplifier by means of a control switch. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification