Multi level flash memory device and program method

• US 7,054,199 B2
• Filed: 12/22/2004
• Issued: 05/30/2006
• Est. Priority Date: 02/26/2004
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Seung-Keun, Park, Dong-Ho
• Primary Examiner(s): Elms, Richard
• Assistant Examiner(s): Wendler, Eric J.
• Application Number:
  US11/021,181
• Publication Number:
  US 20050190603A1
• Time in Patent Office: 524 Days
• Field of Search: 365/185.22, 365/185.28, 365/189.01, 257/314
• US Class Current: 365/185.22
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/3454 Arrangements for verifying correct programming or for detecting overprogrammed cells
• CPC Class Codes: G11C 16/3459 Circuits or methods to verify correct programming of nonvolatile memory cells
• CPC Class Codes: G11C 2211/5621 Multilevel programming verification

Abstract

We describe a multi level flash memory device and program method. The multi level flash memory device includes a plurality of memory cells, each storing an amount of charge indicative of more than two possible states and control circuitry coupled to the memory cells. The control circuitry to applying a programming voltage alternating with a verification voltage to the memory cells until all are at a desired state and applying at least one additional programming voltage to the cells in a highest state without applying a verification voltage. The method includes applying at least one programming pulse to the cells, verifying that each cell has reached the desired state, selecting the cells that are programmed for a highest state, and applying at least one additional programming pulse to the selected cells without further verifying their state.

Claims

1. A method for programming a plurality of memory cells to a desired state, each cell having more than two possible states, comprising:

applying at least one programming pulse to the cells;

verifying that each cell has reached the desired state;

selecting the cells that are programmed for a highest state; and

applying at least one additional programming pulse to the selected cells without further verifying their state.

2. The method of claim 1 where verifying that each cell has reached the desired state comprises:

applying a verification voltage to the cell; and

applying a read voltage that equals the verification voltage to read data from the programmed cells.

3. The method of claim 1 where applying at least one additional programming pulse to the selected cells without further verifying their state enlarges a read margin between the highest state and the next highest state.

4. The method of claim 1 where applying at least one programming pulse to the cells alternates with verifying that each cell has reached the desired state until applying the additional programming pulse.

5. A method of operating a memory device having a plurality of memory cells, each memory cell having more than two possible states, comprising:

programming the cells to a desired state;

applying a selected voltage to verify that the cells are in the desired state;

programming the cells in a highest state to a higher level; and

applying the selected voltage to read data from the cells.

6. The method of claim 5 where programming the cells in the highest state to a higher level enlarges the read margin between the highest state and the higher level.

7. The method of claim 5 where programming the cells to a desired state alternates with applying the selected voltage to verify that the cells are in the desired state until the cells in the highest state are programmed to the higher level.

8. The method of claim 5 comprising applying at least one additional selected voltage to the cells without further verifying their state to enlarge a read margin between the highest state and the higher level.

9. A method of enlarging the read margin between states in a plurality of memory cells, each memory cell having more than two possible states, comprising:

applying programming pulses to the cells;

verifying that each cell has reached a desired state; and

applying at least one additional programming pulse to the cells in a highest state without any further verification of the state of those cells.

10. The method of claim 9 where verifying that each cell has reached the desired state comprises:

applying a verification voltage to the cell; and

reading data from the programmed cells by applying a read voltage that equals the verification voltage.

11. The method of claim 9 where applying at least one additional programming pulse to the cells in the highest state without any further verification of the state of those cells enlarges a read margin between the states.

12. The method of claim 9 where applying programming pulses to the cells alternates with verifying that each cell has reached the desired state until the additional programming pulse is applied.

13. A nonvolatile memory device comprising:

a plurality of memory cells, each storing an amount of charge indicative of more than two possible states; and

control circuitry coupled to the memory cells, the control circuitry to apply programming pulses alternating with a verification voltage to the memory cells until all are at a desired state and to apply at least one additional programming pulse to the cells in a highest state without applying a verification voltage.

14. The nonvolatile memory device of claim 13 where the control circuitry applies a read voltage to the cells that is equal to the verification voltage.

15. The nonvolatile memory device of claim 13 where the device includes a read margin between the highest cell states and the next highest cell states that is enlarged responsive to the additional programming pulse.

16. The nonvolatile memory device of claim 13 where the control circuitry applies programming pulses alternating with the verification voltage until the control circuitry applies the at least one additional programming pulse.

17. A nonvolatile memory device comprising:

means for applying at least one programming pulse to the cells;

means for verifying that each cell has reached the desired state;

means for selecting the cells that are programmed for a highest state; and

means for applying at least one additional programming pulse to the selected cells without further verifying their state.

18. The nonvolatile memory device of claim 17 where the means for verifying that each cell has reached the desired state comprises:

means for applying a verification-voltage to the cell; and

means for applying a read voltage that equals the verification voltage to read data from the programmed cells.

19. The nonvolatile memory device of claim 17 where the means for applying at least one additional programming pulse to the selected cells without further verifying their state includes means for enlarging a read margin between the highest state and the next highest state.

20. The nonvolatile memory device of claim 17 where the means for applying at least one programming pulse to the cells alternates with the means for verifying that each cell has reached the desired state until the means for applying the additional programming pulse applies the additional programming pulse.

21. A nonvolatile memory device comprising:

memory cell means, each cell storing an amount of charge indicative of more than two possible states; and

control means coupled to the memory cell means, the control means to apply programming pulses alternating with a verification voltage to the memory cell means until all are at a desired state and to apply at least one additional programming pulse to the memory cell means in a highest state without applying a verification voltage.

22. The nonvolatile memory device of claim 21 where the control means applies a read voltage to the memory cell means that is equal to the verification voltage.

23. The nonvolatile memory device of claim 21 where the device includes a read margin means between the highest cell states and the next highest cell states that is enlarged responsive to the additional programming pulse.

24. The nonvolatile memory device of claim 21 where the control means applies programming pulses alternating with the verification voltage until the control means applies the at least one additional programming pulse.