Transistor layout configuration for tight-pitched memory array lines
First Claim
1. An integrated circuit comprising:
- a memory array comprising a plurality of memory blocks, said memory array having a plurality of array lines traversing horizontally across at least one memory block;
a plurality M of vertical active area stripes disposed at least partially beneath a first memory block;
a respective plurality of gate electrodes intersecting each respective active area stripe to define individual source/drain regions, every other source/drain region being coupled to a respective bias node for the respective active area stripe, and remaining source/drain regions being respectively coupled to a respective array line associated with the first memory block, thereby forming a respective first driver transistor for the respective array line; and
a connection area along one side of the first memory block for making a vertical connection from a respective array line associated with the first memory block to a respective electrode on a lower interconnection level which is coupled to the corresponding first driver transistor for said array line.
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Accused Products
Abstract
A multi-headed word line driver circuit incorporates bent-gate transistors to reduce the pitch otherwise achievable for interfacing to tightly-pitched array lines. In certain exemplary embodiments, a three-dimensional memory array includes multiple memory blocks and array lines traversing horizontally across at least one memory block. Vertical active area stripes are disposed beneath a first memory block, and a respective plurality of bent-gate electrodes intersects each respective active area stripe to define individual source/drain regions. Every other source/drain region is coupled to a bias node for the active area stripe, and remaining source/drain regions are respectively coupled to a respective array line associated with the first memory block, thereby forming a respective first driver transistor for the respective array line.
143 Citations
28 Claims
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1. An integrated circuit comprising:
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a memory array comprising a plurality of memory blocks, said memory array having a plurality of array lines traversing horizontally across at least one memory block; a plurality M of vertical active area stripes disposed at least partially beneath a first memory block; a respective plurality of gate electrodes intersecting each respective active area stripe to define individual source/drain regions, every other source/drain region being coupled to a respective bias node for the respective active area stripe, and remaining source/drain regions being respectively coupled to a respective array line associated with the first memory block, thereby forming a respective first driver transistor for the respective array line; and a connection area along one side of the first memory block for making a vertical connection from a respective array line associated with the first memory block to a respective electrode on a lower interconnection level which is coupled to the corresponding first driver transistor for said array line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. An integrated circuit comprising:
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a three-dimensional memory array having more than one memory plane, each plane comprising a plurality of array lines of a first type; a plurality of array line driver circuits, a respective one for each respective array line; wherein each array line driver circuit comprises at least one bent-gate transistor. - View Dependent Claims (19, 20, 21, 22)
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23. An integrated circuit comprising:
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a memory array disposed above a dielectric layer, said memory array having a plurality of array lines traversing horizontally across at least a portion of the memory array; and a plurality of array line driver circuits, a respective one for each respective array line, said plurality of array line driver circuits comprising a plurality of first driver transistors of a first conductivity type arranged generally in at least one column, at least some of which first driver transistors comprise bent-gate transistors disposed beneath the memory array. - View Dependent Claims (24, 25, 26, 27, 28)
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Specification