Passivation layer structure

• US 7,054,469 B2
• Filed: 01/30/2002
• Issued: 05/30/2006
• Est. Priority Date: 07/30/1999
• Status: Expired due to Fees

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Opolka, Heinz, Von Basse, Paul-Werner, Scheiter, Thomas, Röhl, Siegfried, Sasse, Thorsten
• Primary Examiner(s): Ahmed, Samir
• Application Number:
  US10/060,431
• Publication Number:
  US 20020109209A1
• Time in Patent Office: 1,581 Days
• Field of Search: 382124-127, 361/56, 361/112, 257/623, 257/626, 257/48, 257/296, 250/208.1, 250/553, 356/71
• US Class Current: 382/124
• CPC Class Codes: G01D 5/24 by varying capacitance
• CPC Class Codes: G06V 40/1329 Protecting the fingerprint sensor against damage caused by the finger

Abstract

A conductor layer is patterned into flat portions, for example of a fingerprint sensor that effects capacitive measurement. The conductor layer is fragmented in a lattice-like manner by cutouts so that an applied passivation layer rests on a base layer that is present beneath the conductor layer. The interlaminar shear strength of the passivation is increased in this way.

Claims

1. A passivation layer structure for sensors that effect a capacitive measurement, the passivation layer structure, comprising:

a base layer;

a passivation layer; and

a conductor layer configured between said base layer and said passivation layer, said conductor layer being patterned into portions extending in two dimensions;

said portions of said conductor layer being formed with cutouts inside said portions; and

said passivation layer extending through said cutouts to connect with said base layer.

2. The passivation layer according to claim 1, wherein said portions of said conductor layer are sensor arrays of a fingerprint sensor that effects capacitive measurement.

3. The passivation layer structure according to claim 2, wherein said cutouts are configured in a lattice-like grid.

4. The passivation layer structure according to claim 1, wherein said cutouts are configured in a lattice-like grid.

5. The passivation layer structure according to claim 1, in combination with a metallization plane and a further layer, wherein:

said metallization plane is formed with cutouts;

said further layer is situated below said metallization plane and is connected to said metallization plane; and

said base layer is applied on said metallization plane.

6. The passivation layer structure according to claim 1, wherein:

said passivation layer is made of a material selected from the group consisting of an oxide and a nitride; and

said base layer is made of an oxide.