Methods of forming oxide masks with submicron openings and microstructures formed thereby

• US 7,056,757 B2
• Filed: 11/22/2004
• Issued: 06/06/2006
• Est. Priority Date: 11/25/2003
• Status: Active Grant

• Current Assignee: Georgia Tech Research Corporation (University System of Georgia)
• Original Assignee: Georgia Tech Research Corporation (University System of Georgia)
• Inventors: Abdolvand, Reza, Ayazi, Farrokh, Anaraki, Siavash P.
• Primary Examiner(s): Mulpuri, Savitri
• Application Number:
  US10/996,683
• Publication Number:
  US 20050124135A1
• Time in Patent Office: 561 Days
• Field of Search: 438 48- 52, 438455-465, 438/33, 438400-454, 216/2
• US Class Current: 438/48
• CPC Class Codes: B81C 1/00619 Forming high aspect ratio structures having deep steep walls

Abstract

Processing techniques are disclosed for batch fabrication of microstructures comprising an oxide mask on a substrate with submicron openings formed therein, and microstructures having deep-submicron, high aspect-ratio etched trenches, using conventional optical photolithography. Exemplary high aspect-ratio etched-trench microstructures that may be produced include single crystal resonators and sensors.

Claims

1. A method of processing a substrate to form a movable microstructure, comprising:

forming a layer of oxide on a substrate;

patterning the layer of oxide to form shallow trenches therein;

depositing a layer of sacrificial polysilicon on the patterned layer of oxide;

depositing a second layer of oxide on the patterned layer of sacrificial polysilicon to fill the shallow trenches;

etching back the second layer of oxide to expose the sacrificial polysilicon;

etching the layer of sacrificial polysilicon to form submicron openings therein, and

etching the substrate to form high aspect ratio trenches to form movable microstructure by undercutting.

2. The method recited in claim 1 wherein the substrate is a semiconductor on insulator substrate and comprises:

a first layer of substrate material;

an insulating sacrificial layer disposed on the first layer of substrate material;

a second layer of substrate material disposed on the insulating sacrificial layer that has the high aspect ratio trenches formed therein; and

etching the insulating sacrificial layer to release the movable microstructure formed in the second layer of the material.