Cleaving process to fabricate multilayered substrates using low implantation doses

• US 7,056,808 B2
• Filed: 11/20/2002
• Issued: 06/06/2006
• Est. Priority Date: 08/10/1999
• Status: Expired due to Fees

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Henley, Francois J., Bryan, Michael A., En, William G.
• Primary Examiner(s): Pham, Long
• Assistant Examiner(s): Rao, Shrinivas H.
• Application Number:
  US10/301,234
• Publication Number:
  US 20030124815A1
• Time in Patent Office: 1,294 Days
• Field of Search: 438/458, 438/406, 438/407, 438/222
• US Class Current: 438/458
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of eventual separation. In a specific embodiment, the cleave layer comprising silicon germanium. The method also includes forming a device layer (e.g., epitaxial silicon) on the cleave layer. The method also includes introducing particles into the cleave layer to add stress in the cleave layer. The particles within the cleave layer are then redistributed to form a high concentration region of the particles in the vicinity of the cleave plane, where the redistribution of the particles is carried out in a manner substantially free from microbubble or microcavity formation of the particles in the cleave plane. That is, the particles are generally at a low dose, which is defined herein as a lack of microbubble or microcavity formation in the cleave plane. The method also includes providing selected energy to the donor substrate to cleave the device layer from the cleave layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner.

Claims

1. A method of forming substrates, the method comprising:

providing a donor substrate;

forming a cleave layer comprising a cleave plane on the donor substrate, the cleave layer comprising silicon germanium;

forming a device layer on the cleave layer, the device layer comprising epitaxial silicon;

introducing particles into the cleave layer to add stress to the cleave plane, where the particles are introduced in a manner substantially free from microbubble or microcavity formation of the particles along the cleave plane within the cleave layer;

redistributing a portion of the particles within the cleave layer to form a higher concentration region of the particles in a region in a vicinity of the cleave plane, where the distribution is carried out in a manner substantially free from microbubble or microcavity formation of the particles along the cleave plane within the cleave layer;

providing selected energy to the donor substrate to cleave the device layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner.

2. The method of claim 1 further comprising bonding the device layer of the donor substrate to a handle wafer after introducing the particles.

3. The method of claim 1 wherein the silicon germanium in the cleave layer comprises at least 10% germanium content in the silicon germanium alloy.

4. The method of claim 1 wherein the substrate comprises a stop layer underlying the cleave layer.

5. The method of claim 1 wherein a cleaved surface of the device layer comprises a surface roughness of less than about 20 Angstroms RMS.

6. The method of claim 1 wherein the particles are selected from hydrogen ions, deuterium ions, helium ions, or other light atomic mass species.

7. The method of claim 4 wherein the stop layer comprises a first stop layer overlying the substrate, a first silicon germanium layer overlying the first stop layer, and a second stop layer overlying the first silicon germanium layer.

8. The method of claim 1 wherein the cleave layer comprises a particle collection region and a cleave region.

9. The method of claim 1 wherein the cleave layer comprises a graded concentration of the silicon germanium.

10. The method of claim 9 wherein the graded concentration is greater near the device layer and decreases toward the donor substrate.

16. The method of claim 1 wherein the cleave plane is disposed in the cleave layer at about a depth of highest concentration of germanium in the cleave layer.

11. A method of forming a multilayered substrate, the method comprising:

providing a donor substrate;

forming a cleave layer comprising a cleave plane on the donor substrate, the cleave layer comprising silicon germanium;

forming a device layer on the cleave layer, the device layer comprising epitaxial silicon;

introducing particles into the cleave layer to add stress in the cleave layer, where the particles are introduced in a manner substantially free from microbubble or microcavity formation of the particles along the cleave plane within the cleave layer;

bonding a handle substrate on the cleave layer;

redistributing a portion of the particles within the cleave layer to form a higher concentration of the particles in a region in the vicinity of the cleave plane, where the redistribution is carried out in a manner substantially free from microbubble or microcavity formation of the particles along the cleave plane within the cleave plane;

providing selected energy to the donor substrate to cleave the device layer at the cleave plane, whereupon the selected energy is applied to create a controlled cleaving action to remove the device layer from a portion of the cleave layer in a controlled manner to separate the handle substrate that has the device layer from the donor substrate.

12. The method of claim 11 wherein the cleave layer is a silicon germanium layer and the device layer is an epitaxial silicon layer.

13. A method of forming substrates, the method comprising;

providing a donor substrate;

forming a cleave layer comprising a cleave plane on the donor substrate, the cleave layer comprising silicon germanium;

forming a device layer on the cleave layer, the device layer comprising epitaxial silicon;

introducing particles into the cleave layer to add stress to the cleave plane, where the particles are selected from those species that are derived free from hydrogen gas, helium gas, or any other species that forms microbubbles or microcavities; and

separating the device layer from the donor substrate at the cleave plane of the donor substrate by a controlled cleaving action.

14. The method of claim 13 further comprising bonding the device layer of the donor substrate to a handle substrate.

15. The method of claim 14 wherein the separating removes the device layer from the donor substrate, the handle substrate comprising the device layer.