Method for fabricating semiconductor device

• US 7,056,841 B2
• Filed: 06/29/2004
• Issued: 06/06/2006
• Est. Priority Date: 04/19/2004
• Status: Expired due to Fees

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Park, Kang Tae
• Primary Examiner(s): NGUYEN, HA T
• Application Number:
  US10/879,858
• Publication Number:
  US 20050233573A1
• Time in Patent Office: 707 Days
• Field of Search: None
• US Class Current: 438/783
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 23/5225 Shielding layers formed together with wiring layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for fabricating a semiconductor device for reducing coupling noise resulting from high integration of devices, comprises the steps of forming a plurality of metal wiring leads spaced from each other by a predetermined distance and arranged on a semiconductor substrate having a predetermined under layer; forming an insulating interlayer on an entire surface of the semiconductor substrate so that the metal wiring leads are covered with the insulating interlayer; and ion-implanting conductive impurities having a plurality opposite to each other into side end layers of the insulating interlayer disposed between the metal wiring leads so as to reduce the internal charges electrified due to an applied external electric field.

Claims

1. A method of fabricating a semiconductor device so as to reduce coupling noise between metal leads, the method comprising the steps of:

i) forming a first metal lead having a first side portion and a first top portion on a semiconductor substrate; and

forming a second metal lead having a second side portion and a second top portion on a semiconductor substrate, wherein the first and second side portions of the metal leads are spaced from each other by a predetermined distance;

ii) forming a first insulating interlayer on the entire surface of the semiconductor substrate so as to cover the first and second metal leads with the first insulating interlayer; and

iii) ion-implanting conductive impurities in portions of the first insulating interlayer contacting each of the first side portion and the second side portion, wherein the polarity of the implanted impurity in the portion of the first insulating interlayer contacting the first side portion is opposite the polarity of the implanted impurity in the portion of the first insulating interlayer contacting the second side portion so as to reduce the internal charges in the first insulating interlayer that are electrified due to external electric field applied by the first and second metal leads.

2. The method as claimed in claim 1, wherein, in step iii), the polarity of the implanted impurity in each portion of the first insulating interlayer is opposite the polarity of the respective side portion of the metal leads to which the portion of the first insulating interlayer is contacted.

3. The method as claimed in claim 1, wherein, in step iii), the coupling noise between the metal leads is controlled by adjusting any one parameter selected from the group consisting of position, energy, and dose of ion implantation.

4. The method as claimed in claim 1, further comprising the steps of:

iv) forming a third metal lead having a third side portion and a third bottom portion on the first insulating interlayer;

v) ion-implanting conductive impurities in portions of the first insulating interlayer contacting each of the first top portion, the second top portion, the third bottom portion, wherein the polarity of the implanted impurity in the portions of the first insulating interlayer contacting respectively the first top portion and the second top portion is opposite the polarity of the implanted impurity in the portions of the first insulating interlayer contacting the third bottom portion so as to reduce the internal charges in the first insulating interlayer that are electrified due to external electric field applied by (1) the first and second metal leads and (2) at least the third metal lead.

5. The method as claimed in claim 4, further comprising the steps of:

vi) forming a fourth metal lead having a fourth side portion on the first insulating interlayer, wherein the third and fourth side portions are spaced from each other by a predetermined distance;

vi) forming a second insulating interlayer on the entire surface of the semiconductor substrate so as to cover the third and fourth metal leads with the second insulating interlayer; and

vii) ion-implanting conductive impurities in portions of the second insulating interlayer adjacent each of the third side portion and the fourth side portion, wherein the polarity of the implanted impurity in the portion of the second insulating interlayer contacting the third side portion is opposite the polarity of the implanted impurity in the portion of the second insulating interlayer contacting the fourth side portion so as to reduce the internal charges in the second insulating interlayer that are electrified due to external electric field applied by the third and fourth metal leads.

6. The method as claimed in claim 5, wherein the polarity of the implanted impurity in the portion of the second insulating interlayer is opposite the polarity of the respective side portion of the metal leads to which the portion of the second insulating interlayer is contacted.

7. The method as claimed in claim 5, wherein, the coupling noise between the metal leads is controlled by adjusting at least one parameter of the ion implantation, the parameters being selected from the group consisting of position, energy, and dose of the ion implantation.

8. The method as claimed in claim 4, wherein the coupling noise between the metal leads is controlled by adjusting at least one parameter of the ion implantation, the parameters being selected from the group consisting of position, energy, and dose of the ion implantation.