Silicon-based visible and near-infrared optoelectric devices
First Claim
1. A photodetector, comprising:
- a silicon substrate having a surface layer doped with sulfur inclusions with an average concentration in a range of about 0.5 to about 5 atom percent so as to exhibit a diodic current-voltage characteristic, said surface layer being configured for exposure to external radiation,a plurality of electrical contacts disposed on selected portions of the substrate for applying a selected reverse bias voltage to said surface layer to facilitate generation of an electrical signal in response to exposure of the surface layer to radiation,wherein said surface layer is configured such that generation of said electrical signal in response to said radiation at said reverse bias voltage exhibits a responsivity greater than about 1 amperes/watts (A/W) for at least one wavelength in a range of about 250 nm to about 1050 nm.
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Abstract
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.
194 Citations
25 Claims
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1. A photodetector, comprising:
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a silicon substrate having a surface layer doped with sulfur inclusions with an average concentration in a range of about 0.5 to about 5 atom percent so as to exhibit a diodic current-voltage characteristic, said surface layer being configured for exposure to external radiation, a plurality of electrical contacts disposed on selected portions of the substrate for applying a selected reverse bias voltage to said surface layer to facilitate generation of an electrical signal in response to exposure of the surface layer to radiation, wherein said surface layer is configured such that generation of said electrical signal in response to said radiation at said reverse bias voltage exhibits a responsivity greater than about 1 amperes/watts (A/W) for at least one wavelength in a range of about 250 nm to about 1050 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A photodetector for use in the visible and the infrared regions of the electromagnetic spectrum, comprising:
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a crystalline silicon substrate having a microstructured surface layer characterized by a plurality of substantially conical microstructures, said microstructure layer comprising; a doped layer including a plurality of silicon nanocrystals containing an electron-donating dopant with an average concentration in a range of about 0.5 to about 1.5 atom percent, said microstructured layer exhibiting a diodic current-voltage curve and being configured to receive an external radiation, a plurality of electrical contacts disposed on selected portions of said substrate for applying a reverse bias voltage said doped layer to facilitate generation of an electrical signal in response to irradiation of at least a portion of said doped layer, wherein said photodetector exhibits a responsivity greater that about 1 amperes/watt for radiation wavelengths in a range of about 250 nm to about 1050 nm and a responsivity greater than about 0.1 amperes/watt for radiation wavelengths in a range of about 1050 nm to about 3500 nm. - View Dependent Claims (16, 17)
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18. A photodetector, comprising:
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a silicon substrate having a microstructured layer having inclusions containing an electron-donating constituent adjacent to a bulk silicon portion, said microstructured layer forming a diode junction with an underlying bulk silicon portion, an electrical contact disposed on a surface portion of said microstructured layer such that at least another surface portion of said layer remains exposed for receiving incident electromagnetic radiation, another electrical contact disposed on a surface of said bulk silicon portion opposed to said microstructured layer, wherein upon application of a selected reverse bias voltage to said diode junction via said electrical contacts, said substrate generates a photocurrent in response to exposure of said microstructured layer to incident radiation having wavelengths in a range of about 250 nm to about 1050 nm at a responsivity in a range of about 1 A/W to about 200 A/W. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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Specification