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Heterostructure bipolar transistor power amplifier module with dynamic voltage supply for improved efficiency

  • US 7,057,461 B1
  • Filed: 03/18/2004
  • Issued: 06/06/2006
  • Est. Priority Date: 03/19/2003
  • Status: Active Grant
First Claim
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1. A power amplifier comprising:

  • first and second power transistor stages receiving first and second collector supply voltages, respectively, the first power transistor stage comprising a first RF transistor operating in response to the first collector supply voltage applied to a collector thereof and including a base biased by a first bias voltage, the second power transistor stage comprising a second RF transistor operating in response to the second collector supply voltage applied to a collector thereof and including a base biased by a second bias voltage; and

    a first stage bias circuit including first and second bias transistors and a second bias circuit including third and fourth bias transistors for providing the respective first and second bias voltages, collectors of the second and fourth bias transistors being biased by a third supply voltage and collectors of the first and third bias transistors operating in response to a fourth supply voltage.

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