Printing a mask with maximum possible process window through adjustment of the source distribution

• US 7,057,709 B2
• Filed: 12/04/2003
• Issued: 06/06/2006
• Est. Priority Date: 12/04/2003
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Rosenbluth, Alan Edward
• Primary Examiner(s): Perkey, W. B.
• Assistant Examiner(s): GUTIERREZ, KEVIN C
• Application Number:
  US10/727,901
• Publication Number:
  US 20050122501A1
• Time in Patent Office: 915 Days
• Field of Search: 355/53, 355/55, 355/67, 355/69, 355/40, 353/34, 353/97, 356/4.07, 356/4.03, 716/9
• US Class Current: 355/69
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091

Abstract

A lithographic mask is illuminated with light from different directions such that intensities of a plurality of incident beams of light provide a largest possible integrated process window defined in terms of an allowed range for defining shapes. Constrained sets of intensity parameters are imposed. A first set of intensity parameters represents maximum possible intensities that can be permitted for overexposed tolerance positions. A second set of intensity parameters represents minimum possible intensities that can be permitted for underexposed tolerance positions. Optimum source intensities of incident beams are defined using a linear program and constraints. The optimum source intensities maximize an integrated range of dose and focal variations without causing printed shapes to depart from the allowed range. Apparatus are detailed and variations are described.

Claims

1. A mask illumination method, comprising:

illuminating a lithographic mask with light from different directions such that intensities of a plurality of incident beams of light provide a largest possible integrated process window defined in terms of an allowed range for defining shapes, comprising

imposing, through application of at least one set of constraints, a first set of intensity parameters for representing maximum possible intensities that can be permitted for overexposed tolerance positions and a second set of intensity parameters for representing minimum possible intensities that can be permitted for underexposed tolerance positions; and

,

determining optimum source intensities of incident beams using a linear program and constraints that comprise at least said one set of constraints, where the determined optimum source intensities maximize an integrated range of at least one of dose variations and focal variations without causing printed shapes to depart from the allowed range.

2. A method as in claim 1, where boundaries of the process window impose shape limits corresponding to at least one of underexposed and overexposed conditions.

3. The method of claim 1, further comprising, prior to determining, defining for each of a plurality of different focal ranges at least one parameter for each of the first set and the second set,

and wherein the determined optimum source intensities maximize an integrated range of dose and focal variations without causing printed shapes to depart from the allowed range.

4. A system for illuminating a mask, comprising

means for illuminating a photolithographic mask with light from different directions such that intensities of a plurality of incident beams provide a largest possible integrated process window defined in terms of an allowed range for defining shapes, said illuminating means comprising means for imposing, through application of at least one set of constraints, a first set of intensity parameters for representing maximum possible intensities that can be permitted for overexposed tolerance positions and a second set of intensity parameters for representing minimum possible intensities that can be permitted for underexposed tolerance positions;

and

means for determining optimum source intensities of incident beams from the means for illuminating using a linear program and constraints that comprise at least said one set of constraints, where the determined optimum source intensities maximize an integrated range of at least one of dose variations and focal variations without causing printed shapes to depart from the allowed range.

5. A system as in claim 4, where boundaries of the process window impose shape limits corresponding to at least one of underexposed and overexposed conditions.

6. A system as in claim 4, where the mask is used to project patterns onto a wafer.

7. The system of claim 4, further comprising:

means for defining, for each of a plurality of different focal ranges, at least one parameter for each of the first set and the second set;

and wherein the determined optimum source intensities maximize an integrated range of dose and focal variations without causing printed shapes to depart from the allowed range.