Cross point memory array with fast access time
First Claim
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1. A device comprising:
- a semiconductor substrate;
a stacked cross point array formed over the semiconductor substrate, the stacked cross point array having at least two layers of memory cells, each successive layer of memory cells being formed over the previous layer of memory cells; and
drivers that are formed on the semiconductor substrate, the drivers being in electrical communication with the stacked cross point array;
wherein the stacked cross point array has at least two separate access times, the fastest of which is associated with the layer of memory cells closest to the semiconductor substrate;
wherein placement of the drivers contribute to the access time associated with the layer of memory cells closest to the semiconductor substrate being the fastest access time.
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Abstract
Cross point array with fast access time. A cross point array is driven by drivers on a semiconductor substrate. The drivers for either a single-layer cross point array or for the bottom layer of a stacked cross point array can be positioned to improve access time. Specifically, if the x-direction drivers are positioned in the middle of the x-direction conductive array lines and the y-direction drivers are positioned in the middle of the y-direction conductive array lines, the access time will be improved.
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Citations
9 Claims
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1. A device comprising:
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a semiconductor substrate;
a stacked cross point array formed over the semiconductor substrate, the stacked cross point array having at least two layers of memory cells, each successive layer of memory cells being formed over the previous layer of memory cells; and
drivers that are formed on the semiconductor substrate, the drivers being in electrical communication with the stacked cross point array;
wherein the stacked cross point array has at least two separate access times, the fastest of which is associated with the layer of memory cells closest to the semiconductor substrate;
wherein placement of the drivers contribute to the access time associated with the layer of memory cells closest to the semiconductor substrate being the fastest access time. - View Dependent Claims (2, 7, 8)
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3. A device comprising:
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a stacked cross point having a first x-direction conductive array line layer;
a first memory plug layer having a first access time, and positioned on top of the first x-direction conductive array line layer;
a first y-direction conductive array line layer on top of the first memory plug layer;
a second memory plug layer having a second access time, and positioned on top of the first y-direction conductive array line layer; and
a second x-direction conductive array line layer on top of the second memory plug layer;
a first x-direction driver set in electrical communication with the first x-direction conductive array line layer;
a y-direction driver set in electrical communication with the first y-direction conductive array line layer; and
a second x-direction driver set in electrical communication with the first x-direction conductive array line layer;
wherein the first access time is faster than the second access time; and
wherein placement of the first and second x-direction drivers contribute to the first access time being faster than the second access time. - View Dependent Claims (4, 5, 6, 9)
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Specification