Method and system for temperature compensation for memory cells with temperature-dependent behavior
First Claim
1. A method for temperature compensation for a memory cell with temperature-dependent behavior, the method comprising:
- (a) generating at least one of a first temperature-dependent reference voltage comprising a negative temperature coefficient and a second temperature-dependent reference voltage comprising a positive temperature coefficient;
(b) generating one of a wordline voltage and a bitline voltage from one of the at least one of the first and second temperature-dependent reference voltages;
(c) generating the other of the wordline and bitline voltages; and
(d) applying the wordline and bitline voltages across a memory cell.
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Abstract
The preferred embodiments described herein relate to a method and system for temperature compensation for memory cells with temperature-dependent behavior. In one preferred embodiment, at least one of a first temperature-dependent reference voltage comprising a negative temperature coefficient and a second temperature-dependent reference voltage comprising a positive temperature coefficient is generated. One of a wordline voltage and a bitline voltage is generated from one of the at least one of the first and second temperature-dependent reference voltages. The other of the wordline and bitline voltages is generated, and the wordline and bitline voltages are applied across a memory cell. Other methods and systems are disclosed for sensing a memory cell comprising temperature-dependent behavior, and each of the preferred embodiments can be used alone or in combination with one another.
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Citations
33 Claims
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1. A method for temperature compensation for a memory cell with temperature-dependent behavior, the method comprising:
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(a) generating at least one of a first temperature-dependent reference voltage comprising a negative temperature coefficient and a second temperature-dependent reference voltage comprising a positive temperature coefficient; (b) generating one of a wordline voltage and a bitline voltage from one of the at least one of the first and second temperature-dependent reference voltages; (c) generating the other of the wordline and bitline voltages; and (d) applying the wordline and bitline voltages across a memory cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A system for temperature compensation for a memory cell with temperature-dependent behavior, the system comprising:
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a first temperature-dependent reference voltage source operative to generate a first temperature-dependent reference voltage comprising a negative temperature coefficient; a second temperature-dependent reference voltage source operative to generate a second temperature-dependent reference voltage comprising a positive temperature coefficient; a wordline voltage regulator operative to generate a wordline voltage from one of the first and second temperature-dependent reference voltages; a bitline voltage regulator operative to generate a bitline voltage from the other of the first and second temperature-dependent reference voltages; and a memory cell coupled with the wordline and bitline voltage regulators. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A system for sensing a memory cell comprising temperature-dependent behavior, the system comprising:
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a memory cell comprising temperature-dependent behavior; a current sensing amplifier coupled with the memory cell; and a temperature-dependent reference current source cells coupled with the current sensing amplifier, wherein the temperature-dependent reference current source comprises a plurality of memory cells that have the same temperature-dependent behavior as the memory cell, wherein each of the plurality of memory cells generates a current when a voltage is applied to the plurality of memory cells, and wherein the temperature-dependent reference current source generates a current reference from an average of the currents generated by the plurality of memory cells; wherein the current sensing amplifier compares the current reference to current sensed back from the memory cell during a read operation to determine whether the memory cell is programmed. - View Dependent Claims (22, 23, 24, 25, 26, 27)
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28. A system for sensing a memory cell comprising temperature-dependent behavior, the system comprising:
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a memory cell comprising temperature-dependent behavior; a current sensing amplifier coupled with the memory cell; a temperature-dependent reference current source coupled with the current sensing amplifier, the temperature-dependent reference current source operative to generate a temperature-dependent reference current comprising a positive temperature coefficient; wherein the current sensing amplifier compares the temperature-dependent reference current to current sensed back from the memory cell during a read operation to determine whether the memory cell is programmed; a second temperature-dependent current source, the second temperature-dependent current source operative to generate a reference current with a negative temperature coefficient; and a temperature-independent current source operative to generate a temperature-independent reference current; wherein the temperature-dependent reference current source generates the temperature-dependent reference current from the reference current generated by the second temperature-dependent current source and the temperature-independent reference current. - View Dependent Claims (29, 30, 31, 32, 33)
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Specification