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Semiconductor integrated circuit and method of manufacturing the same

  • US 7,058,922 B2
  • Filed: 04/28/2005
  • Issued: 06/06/2006
  • Est. Priority Date: 07/13/2000
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor integrated circuit comprising:

  • forming a plurality of voltage-activated transistors in a semiconductor layer on a substrate having an insulator at least on a surface thereof, said plurality of voltage-activated transistors including body contact regions electrically connectable one of body regions being electrically isolated from each other and being electrically isolated from said substrate and a source region and having the same channel conduction type; and

    electrically connecting said plurality of voltage-activated transistors in series to a power supply terminal and an output terminal, and to said source region and said body contact region of at least one of said plurality of voltage-activated transistors near said output terminal, a drain region and a gate electrode of at least one of said voltage-activated transistors near said output terminal being not electrically connected.

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