Micromechanical mass flow sensor and method for the production thereof

• US 7,060,197 B2
• Filed: 06/08/2002
• Issued: 06/13/2006
• Est. Priority Date: 06/23/2001
• Status: Expired due to Fees

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Metzger, Lars, Sundermeier, Frieder, Fischer, Frank, Fuertsch, Matthias
• Primary Examiner(s): Norton, Nadine G.
• Assistant Examiner(s): CHEN, ERIC BRICE
• Application Number:
  US10/362,654
• Publication Number:
  US 20040026365A1
• Time in Patent Office: 1,466 Days
• Field of Search: 216/2, 216/41, 216/51, 216/52, 216/79, 216 88- 91, 438/706, 438/710, 438/719, 438/723, 438/735, 438/747, 438690-692, 438/760, 438/770
• US Class Current: 216/79
• CPC Class Codes: G01F 1/6845 Micromachined devices

Abstract

In a mass flow sensor having a layered structure on the upper side of a silicon substrate (1), and having at least one heating element (8) patterned out of a conductive layer in the layered structure, thermal insulation between the heating element (8) and the silicon substrate (1) is achieved by way of a silicon dioxide block (5) which is produced beneath the heating element (8) either in the layered structure on the silicon substrate (1) or in the upper side of the silicon substrate (1). As a result, the sensor can be manufactured by surface micromechanics, i.e. without wafer back-side processes.

Claims

1. A method for manufacturing a micromechanical mass flow sensor, the method comprising:

patterning an etching mask that is one of applied on a silicon layer that is applied above a silicon oxide layer on a silicon substrate and applied directly on the silicon substrate;

producing vertical grooves by etching in the silicon layer and the silicon substrate, lands of silicon remaining behind between the vertical grooves;

oxidizing the lands of silicon by thermal oxidation;

covering the silicon dioxide block by deposing a silicon dioxide sealing layer, and leveling it to produce a smooth surface on a silicon dioxide block;

wherein the etching mask is applied on the silicon layer, and before oxidation of the lands, the silicon oxide layer is at least partly removed by a gas-phase etching step to produce a horizontal cavity beneath a patterned region of the silicon layer;

wherein to produce at least one pillar in the horizotal cavity, the silicon oxide layer is patterned before applying the silicon layer.

2. The method of claim 1, where one of the silicon layer and the silicon substrate is undercut beneath a hard mask by isotropic etching, and the hard mask remains behind on the lands of silicon after etching and is later covered.

3. The method of claim 1, wherein there is deposited on the silicon dioxide sealing layer a nitride layer onto which a silicon oxide auxiliary layer is deposited for planarization and is then planarized down to the nitride layer.

4. The method of claim 1, wherein a nitride layer and then a silicon dioxide sealing layer are deposited one of onto oxidized structures in the silicon layer and in the silicon substrate, and are then planarized down to the nitride layer.

5. The method of claim 3, wherein the planarization is accomplished by chemically-mechanically polishing one of the silicon oxide auxiliary layer and the silicon dioxide sealing layer, the nitride layer serving as a planarization stop.

6. The method of claim 4, wherein the planarization is accomplished by chemically-mechanically polishing one of the silicon oxide auxiliary layer and the silicon dioxide sealing layer, the nitride layer serving as a planarization stop.

7. The method of claim 1, wherein the leveling is accomplished by one of a spin-on-glass process and a flow-glass process.