Method for fabricating a semiconductor device by transferring a layer to a support with curvature

• US 7,060,591 B2
• Filed: 03/15/2005
• Issued: 06/13/2006
• Est. Priority Date: 12/28/2001
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Maruyama, Junya, Yamazaki, Shunpei, Murakami, Masakazu
• Primary Examiner(s): Smoot, Stephen W.
• Application Number:
  US11/079,287
• Publication Number:
  US 20050164470A1
• Time in Patent Office: 455 Days
• Field of Search: 438/458
• US Class Current: 438/457
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells
• CPC Class Codes: G02F 1/13394 spacers regularly patterned on the cell subtrate, e.g. walls, pillars G02F1/133377 takes precedence
• CPC Class Codes: G02F 1/1341 Filling or closing of cells
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 27/1262 with a particular formation, treatment or coating of the substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H10K 2102/311 : Flexible OLED
• CPC Class Codes: H10K 59/12 : Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 : Manufacture or treatment
• CPC Class Codes: H10K 59/1213 : the pixel elements being TFTs
• CPC Class Codes: H10K 59/123 : Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/131 : Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 71/00 : Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/50 : Forming devices by joining two substrates together, e.g. lamination techniques
• CPC Class Codes: H10K 71/80 : using temporary substrates
• CPC Class Codes: H10K 77/111 : Flexible substrates
• CPC Class Codes: Y02E 10/549 : Organic PV cells

Abstract

The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Claims

1. A method for fabricating a semiconductor device comprising:

preparing a support with curvature;

preparing a transfer object;

forming a layer containing at least a device over a substrate having higher rigidity than that of the support;

bonding the support with curvature to the layer containing the device with an external force applied so as to match a surface topology of the layer containing the device;

peeling the layer containing the device bonded with the support from the substrate by physical means; and

bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object,

wherein the support bonded with the layer containing the device returns into a shape after preparing the support with curvature at a time of finishing peeling the layer containing the device bonded with the support from the substrate by physical means.

2. The method for fabricating the semiconductor device according to claim 1, wherein the device includes one kind or a plurality of kinds selected from a thin film transistor and an organic light emitting diode.

3. The method for fabricating the semiconductor device according to claim 1, wherein the support has curvature and elasticity at a time of finishing preparing the support with curvature.

4. The method for fabricating the semiconductor device according to claim 1, wherein R_i≦

R_f≦

R_m is satisfied, where a curvature radius of the support after preparing the support with curvature is R_i, a curvature radius of the support after bonding the support with curvature to the layer containing the device is R_m, and a curvature radius of the support after peeling the layer containing the device bonded with the support from the substrate is R_f.

5. The method for fabricating the semiconductor device according to claim 1, wherein the support is an encapsulation material, and the device is an organic light emitting diode.

6. The method for fabricating the semiconductor device according to claim 1, wherein the support is an opposite substrate and the device has a pixel electrode, in which a liquid crystal material is filled between the pixel electrode and the opposite substrate.

7. The method for fabricating the semiconductor device according to claim 1, wherein the transfer object has curvature at a time of finishing preparing the transfer object.

8. The method for fabricating the semiconductor device according to claim 1, wherein at least one of the support and the transfer object is transparent.

9. The method for fabricating the semiconductor device according to claim 1, wherein curvature radii of the support and the transfer object range from 50 to 200 cm.

10. A method for fabricating a semiconductor device comprising:

preparing a support with curvature;

preparing a transfer object;

forming a layer containing at least a device over a substrate having higher rigidity than that of the support;

bonding the support with curvature to the layer containing the device;

peeling the layer containing the device bonded with the support from the substrate; and

bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object,

wherein the support bonded with the layer containing the device returns into a curved shape by restoring force after peeling the layer containing the device bonded with the support from the substrate.

11. The method for fabricating the semiconductor device according to claim 10, wherein the device includes one kind or a plurality of kinds selected from a thin film transistor and an organic light emitting diode.

12. The method for fabricating the semiconductor device according to claim 10, wherein the support has curvature and elasticity at a time of finishing preparing the support with curvature.

13. The method for fabricating the semiconductor device according to claim 10, wherein R_i≦

R_f≦

R_m is satisfied, where a curvature radius of the support after preparing the support with curvature is R_i, a curvature radius of the support after bonding the support with curvature to the layer containing the device is R_m, and a curvature radius of the support after peeling the layer containing the device bonded with the support from the substrate is R_f.

14. The method for fabricating the semiconductor device according to claim 10, wherein the support is an encapsulation material, and the device is an organic light emitting diode.

15. The method for fabricating the semiconductor device according to claim 10, wherein the support is an opposite substrate and the device has a pixel electrode, in which a liquid crystal material is filled between the pixel electrode and the opposite substrate.

16. The method for fabricating the semiconductor device according to claim 10, wherein the transfer object has curvature at a time of finishing preparing the transfer object.

17. The method for fabricating the semiconductor device according to claim 10, wherein at least one of the support and the transfer object is transparent.

18. The method for fabricating the semiconductor device according to claim 10, wherein curvature radii of the support and the transfer object range from 50 to 200 cm.

19. A method for fabricating a semiconductor device comprising:

preparing a support with curvature;

preparing a transfer object;

forming a layer containing at least a device over a substrate having higher rigidity than that of the support;

bonding the support with curvature to the layer containing the device;

peeling the layer containing the device bonded with the support from the substrate; and

bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object.

20. The method for fabricating the semiconductor device according to claim 19, wherein the device includes one kind or a plurality of kinds selected from a thin film transistor and an organic light emitting diode.

21. The method for fabricating the semiconductor device according to claim 19, wherein the support has curvature and elasticity at a time of finishing preparing the support with curvature.

22. The method for fabricating the semiconductor device according to claim 19, wherein R_i≦

R_f≦

R_m is satisfied, where a curvature radius of the support after preparing the support with curvature is R_i, a curvature radius of the support after bonding the support with curvature to the layer containing the device is R_m, and a curvature radius of the support after peeling the layer containing the device bonded with the support from the substrate is R_f.

23. The method for fabricating the semiconductor device according to claim 19, wherein the support is an encapsulation material, and the device is an organic light emitting diode.

24. The method for fabricating the semiconductor device according to claim 19, wherein the support is an opposite substrate and the device has a pixel electrode, in which a liquid crystal material is filled between the pixel electrode and the opposite substrate.

25. The method for fabricating the semiconductor device according to claim 19, wherein the transfer object has curvature at a time of finishing preparing the transfer object.

26. The method for fabricating the semiconductor device according to claim 19, wherein at least one of the support and the transfer object is transparent.

27. The method for fabricating the semiconductor device according to claim 19, wherein curvature radii of the support and the transfer object range from 50 to 200 cm.

28. A method for fabricating display device formed over an object comprising:

preparing a support with curvature;

forming a first layer over a substrate;

forming a second layer over the first layer;

forming an electroluminescence layer over the second layer;

bonding the support with curvature to the electroluminescence layer with an external force applied so as to match a surface topology of the electroluminescence layer with an adhesive;

peeling the first layer and the substrate from the second layer by physical means; and

bonding the second layer to a surface of the object,

wherein the support bonded with the electroluminescence layer returns into a curved shape after peeling the first layer and the substrate from the second layer.

29. The method for fabricating the semiconductor device according to claim 28, wherein the display device is a passive matrix electroluminescence device or an active matrix electroluminescence device.

30. The method for fabricating the semiconductor device according to claim 28, wherein the object is windshield, rear window, window or a dashboard part.

31. The method for fabricating the semiconductor device according to claim 28, wherein the substrate having higher rigidity than that of the support.

32. The method for fabricating the semiconductor device according to claim 28, wherein the first layer have tensile stress in the range of 1 to 1×

10¹⁰ Dyne/cm² after the peeled layer is formed.

33. The method for fabricating the semiconductor device according to claim 28, wherein the first layer is a single layer formed of an element selected from W, WN, TiN and TiW, an alloy material or compound material having a principal component of the elements, or a laminated layer of these.

34. The method for fabricating the semiconductor device according to claim 28, wherein the second layer have compressive stress in the range of 1 to 1×

10¹⁰ Dyne/cm².

35. The method for fabricating the semiconductor device according to claim 28, wherein the second layer is silicon oxide, silicon oxide nitride, metal oxide materials or a laminated layer of these.

36. The method for fabricating the semiconductor device according to claim 28, wherein the support has curvature and elasticity at a time of finishing forming the support with curvature.

37. The method for fabricating the semiconductor device according to claim 28, wherein R_i≦

R_f≦

R_m is satisfied, where a curvature radius of the support after forming the support with curvature is R_i, a curvature radius of the support after bonding the support with curvature to the electroluminescence layer is R_m, and a curvature radius of the support after peeling the electroluminescence layer bonded with the support from the substrate is R_f.

38. The method for fabricating the semiconductor device according to claim 28, wherein the support is an encapsulation material.

39. The method for fabricating the semiconductor device according to claim 28, wherein at least one of the support and the object is transparent.

40. The method for fabricating the semiconductor device according to claim 28, wherein curvature radii of the support and the object range from 50 to 200 cm.

41. The method for fabricating the semiconductor device according to claim 28, wherein the support has a desired curvature and elasticity.

42. The method for fabricating the semiconductor device according to claim 28, wherein the support has the property a restoring force.

43. The method for fabricating the semiconductor device according to claim 28, wherein the electroluminescence layer has an organic electroluminescence device.

44. A method for fabricating a semiconductor device comprising:

preparing a support with curvature;

preparing a transfer object;

forming a layer containing at least a device over a substrate;

bonding the support with curvature to the layer containing the device;

peeling the layer containing the device bonded with the support from the substrate; and

bonding the transfer object to the layer containing the device to sandwich the layer containing the device between the support and the transfer object,

wherein a curvature radius of the support after bonding the support to the layer containing the device is equal to or more than a curvature radius of the support after peeling the layer bonded with the support from the substrate.

45. The method for fabricating the semiconductor device according to claim 44, wherein a curvature radius of the support after peeling the layer bonded with the support from the substrate is equal to or more than a curvature radius of the support after preparing the support with curvature.

46. The method for fabricating the semiconductor device according to claim 44, wherein the device comprises at least one selected from the group consisting of a thin film transistor and an organic light emitting diode.

47. The method for fabricating the semiconductor device according to claim 44, wherein the support has curvature and elasticity when preparing the support with curvature.

48. The method for fabricating the semiconductor device according to claim 44, wherein the support is an encapsulation material, and the device is an organic light emitting diode.

49. The method for fabricating the semiconductor device according to claim 44, wherein the support is an opposite substrate and the device has a pixel electrode, in which a liquid crystal material is filled between the pixel electrode and the opposite substrate.

50. The method for fabricating the semiconductor device according to claim 44, wherein the transfer object has curvature when preparing the transfer object.

51. The method for fabricating the semiconductor device according to claim 44, wherein at least one of the support and the transfer object is transparent.

52. The method for fabricating the semiconductor device according to claim 44, wherein curvature radii of the support and the transfer object range from 50 to 200 cm.

53. The method for fabricating the semiconductor device according to claim 44, wherein the substrate has higher rigidity than that of the support.