Techniques and systems for analyte detection

• US 7,061,061 B2
• Filed: 10/24/2002
• Issued: 06/13/2006
• Est. Priority Date: 04/09/1998
• Status: Expired due to Fees

• Current Assignee: California Institute of Technology
• Original Assignee: California Institute of Technology
• Inventors: Grubbs, Robert H., Lewis, Nathan S., Payne, Richard S., Goodman, Rodney M., Koosh, Vincent F., Dickson, Jeffery
• Primary Examiner(s): Baumeister, B. William
• Assistant Examiner(s): Farahani, Dana
• Application Number:
  US10/280,795
• Publication Number:
  US 20030136960A1
• Time in Patent Office: 1,328 Days
• Field of Search: 257/414, 257/133, 257/252, 257/253, 257/866, 257/48, 738/657, 738/658, 738/66, 73/233.4, 324/609, 324/71.5, 438/48, 438/49
• US Class Current: 257/414
• CPC Class Codes: G01N 27/126 comprising organic polymers
• CPC Class Codes: G01N 27/128 Microapparatus
• CPC Class Codes: G01N 27/221 by investigating the dielectric properties using microwaves G01N22/00; measuring loss factors or dielectric constants per se G01R27/26
• CPC Class Codes: G01N 33/0031 comprising two or more sensors, e.g. a sensor array

Abstract

Techniques are used to detect and identify analytes. Techniques are used to fabricate and manufacture sensors to detect analytes. An analyte (810) is sensed by sensors (820) that output electrical signals in response to the analyte. The electrical signals may be preprocessed (830) by filtering and amplification. In one embodiment, a plurality of sensors are formed on a single integrated circuit. The sensors may have diverse compositions.

Claims

1. An integrated circuit comprising:

a plurality of sensor sites formed on the integrated circuit, wherein a sensor material is constrained at the sensor site and has regions of a nonconductive organic material and a conductive material, and in the presence of an analyte, the sensor material has measurable changes in an electrical property; and

electrical terminals formed to couple to the sensor material at the sensor sites, wherein the electrical terminals transmit electrical signals to evaluate the change in the electrical property of the sensor material,

wherein at least one of the sensor sites is a sensor well that comprises;

a field oxide layer;

a polysilicon layer disposed directly on the field oxide layer;

a first oxide layer disposed directly on the polysilicon layer;

a metal-1 layer disposed directly on the first oxide layer;

a second oxide layer disposed directly on the metal-1 layer; and

a metal-2 layer disposed directly on the second oxide layer.

2. The integrated circuit of claim 1 wherein the electrical property comprises resistance.

3. The integrated circuit of claim 1 wherein the electrical property comprises capacitance.

4. The integrated circuit of claim 1 wherein the electrical property comprises inductance.

5. The integrated circuit of claim 1 wherein the nonconductive organic material is a polymer.

6. The integrated circuit of claim 1 wherein the conductive material is selected from the group consisting of carbon black, conducting organic conductors, metals, metal colloids, and inorganic conductors.

8. An electronic system for olfaction comprising an integrated circuit as recited in claim 1.

9. The integrated circuit of claim 1 wherein the sensor material at a first sensor site has a different composition from the sensor material at a second sensor site.

10. The integrated circuit of claim 1 wherein the sensor material at one sensor site is different from the sensor material at other sensor sites.

11. The integrated circuit of claim 1 further comprising:

a plurality of transistors formed on the integrated circuit and coupled to the electrical terminals.

7. An integrated circuit comprising:

a plurality of sensor sites formed on the integrated circuit, wherein a sensor material is constrained at the sensor site and has regions of a nonconductive organic material and a conductive material, and in the presence of an analyte, the sensor material has measurable changes in an electrical property; and

electrical terminals formed to couple to the sensor material at the sensor sites, wherein the electrical terminals transmit electrical signals to evaluate the change in the electrical property of the sensor material,

wherein at least one of the sensor sites is a trench that comprises;

a field oxide layer;

a polysilicon layer disposed directly on the field oxide layer;

a first oxide layer disposed directly on the polysilicon layer;

a metal-1 layer disposed directly on the first oxide layer;

a second oxide layer disposed directly on the metal-1 layer; and

a metal-2 layer disposed directly on the second oxide layer.

12. A sensor cell formed on an integrated circuit comprising:

a sensor site, wherein a sensor material is constrained at the sensor site by a well structure surrounding the sensor site, and an electrical property of the sensor material changes in the presence of an analyte; and

electronic devices coupled to the sensor material to enable measurement of changes in the electrical property of the sensor material,

wherein the well site comprises;

a field oxide layer;

a polysilicon layer disposed directly on the field oxide layer;

a first oxide layer disposed directly on the polysilicon layer;

a metal-1 layer disposed directly on the first oxide layer;

a second oxide layer disposed directly on the metal-1 layer; and

a metal-2 layer disposed directly on the second oxide layer.

13. The sensor cell of claim 12 wherein the electronic devices include circuitry to determine change in resistance of the sensor material relative to a baseline resistance of the sensor material.

14. The sensor cell of claim 12 wherein the electronic devices are formed beneath the sensor site.

15. An integrated circuit comprising a plurality of sensor sites as recited in claim 12.

16. An integrated circuit comprising:

an array of sensors for detecting chemical analytes, each sensor having a first and second output terminal; and

a plurality of adaptive electronic circuits, each adaptive electronic circuit associated with one of the sensors and coupled to the first and second output terminals of the associated sensor, each adaptive electronic circuit including adaptive signal processing techniques for tuning out environmental background.

17. The integrated circuit of claim 16 wherein each sensor is coupled to an adjacent sensor.

18. The integrated circuit of claim 16 wherein a sensor is coupled to an adjacent sensor through a resistive element.

19. The integrated circuit of claim 16 wherein each adaptive electronic circuit communicates to other adaptive electronic circuits and further includes adaptive electronics for compensating for baseline drift.

20. The integrated circuit of claim 16 further comprising:

a row multiplexer to select a row in the array of polymer sensors; and

a column multiplexer to select a column in the array of polymer sensors.

21. The integrated circuit of claim 16 wherein the electronics generates a change signal to indicate changed data for a respective sensor, and the integrated circuit further comprises:

a multiplexer circuit to determine and select a location of a sensor in the array having changed data.

22. The integrated circuit of claim 16, wherein at least one of the adaptive signal processing techniques for tuning out environmental background includes either or both of frequency shifting or phase shifting of signals.

23. An integrated circuit comprising:

a plurality of sensor sites formed on the integrated circuit, wherein a sensor material is constrained at the sensor site, and wherein the sensor material has measurable changes in an electrical property in the presence of an analyte; and

electrical terminals formed to couple to the sensor material at the sensor sites, wherein the electrical terminals transmit electrical signals to evaluate the change in the electrical property of the sensor material,

wherein at least one of the sensor sites is a sensor well that comprises;

a field oxide layer; and

a polysilicon layer disposed directly on the field oxide layer.

24. The integrated circuit of claim 23, wherein the at least one of the sensor sites further comprises:

a first oxide layer disposed directly on the polysilicon layer;

a metal-1 layer disposed directly on the first oxide layer;

a second oxide layer disposed directly on the metal-1 layer; and

a metal-2 layer disposed directly on the second oxide layer.

25. The integrated circuit of claim 23, wherein the plurality of sensor sites include a first sensor site of a first material composition and a second sensor site of a second material composition different from the first material composition.

26. An integrated circuit comprising:

a plurality of sensor sites formed on a semiconductor substrate, wherein a sensor material is constrained at each sensor site and, wherein the sensor material at each sensor site is compositionally different from the other sensor sites and, wherein in the presence of an analyte, the sensor materials have different measureable changes in an electrical property; and

electrical terminals formed to couple to the sensor material at the sensor sites, wherein the electrical terminals transmit electrical signals to evaluate the change in the electrical property of the sensor material,

wherein the electrical signals are analyzed to create a pattern that provides unique information about the analyte being measured.

27. The integrated circuit of claim 26, further comprising electronic circuitry to process the electrical signals, the electronic circuitry being located adjacent to or beneath each sensor site.

28. The integrated circuit of claim 27, wherein the electronic circuitry includes at least one of a read-out amplifier, a row/column selector, or an analog to digital converter.